參數(shù)資料
型號(hào)： M58WR032FB80ZB6F
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述： 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 36/86頁(yè)
文件大?。?/td> 1306K
代理商： M58WR032FB80ZB6F
M58WR032FT, M58WR032FB
36/86
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in
Ta-
ble 14.
Exact erase times may change depending
on the memory array condition. The best case is
when all the bits in the block or bank are at ‘0’ (pre-
programmed). The worst case is when all the bits
in the block or bank are at ‘1’ (not prepro-
grammed). Usually, the system overhead is negli-
gible with respect to the erase time.
In the M58WR032FT/B the maximum number of
Program/ Erase cycles depends on the V
PP
volt-
age supply used.
Table 14. Program/Erase Times and Endurance Cycles
Parameter
Condition
Min
Typ
Typical after
100k W/E
Cycles
Max
Unit
V
P
D
Erase
Parameter Block (4 KWord)
(2)
0.3
1
2.5
s
Main Block (32
KWord)
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Bank (4Mbit)
Preprogrammed
3
s
Not Preprogrammed
4.5
s
Program
(3)
Word
10
10
100
μs
Parameter Block (4 KWord)
32
ms
Main Block (32 KWord)
256
ms
Suspend Latency
Program
5
10
μs
Erase
5
20
μs
Program/Erase
Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
相關(guān)PDF資料
PDF描述
M58WR032F-ZB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZBT RECTIFIER SCHOTTKY SINGLE 1A 40V 25A-ifsm 0.9V-vf 10mA-ir DO-41 5K/REEL-13
M58WR032FB DIODE, SCHOTTKY, 20V, 3A.
M58WR032FT60ZB6E 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6F 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR032FB80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
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