參數(shù)資料
型號： M58WR032FB80ZB6F
廠商： 意法半導體
英文描述： 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述： 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 40/86頁
文件大?。?/td> 1306K
代理商： M58WR032FB80ZB6F
M58WR032FT, M58WR032FB
40/86
Table 18. DC Characteristics - Currents
Symbol
Note: 1. Sampled only, not 100% tested.
2. V
DD
Dual Operation current is the sum of read and program or erase currents.
Parameter
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQ
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQ
±1
μA
I
DD1
Supply Current
Asynchronous Read (f=6MHz)
E = V
IL
, G = V
IH
3
6
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
7
16
mA
8 Word
10
18
mA
16 Word
12
22
mA
Continuous
13
25
mA
Supply Current
Synchronous Read (f=66MHz)
4 Word
8
17
mA
8 Word
11
20
mA
16 Word
14
25
mA
Continuous
16
30
mA
I
DD2
Supply Current (Reset)
RP = V
SS
± 0.2V
10
50
μA
I
DD3
Supply Current (Standby)
E = V
DD
± 0.2V
10
50
μA
I
DD4
Supply Current (Automatic Standby)
E = V
IL
, G = V
IH
10
50
μA
I
DD5
(1)
Supply Current (Program)
V
PP
= V
PPH
8
15
mA
V
PP
= V
DD
10
20
mA
Supply Current (Erase)
V
PP
= V
PPH
8
15
mA
V
PP
= V
DD
10
20
mA
I
DD6 (1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
Read in another Bank
13
26
mA
Program/Erase in one
Bank, Synchronous
Read in another Bank
23
45
mA
I
DD7(1)
Supply Current Program/ Erase
Suspended (Standby)
E = V
DD
± 0.2V
10
50
μA
I
PP1(1)
V
PP
Supply Current (Program)
V
PP
= V
PPH
2
5
mA
V
PP
= V
DD
0.2
5
μA
V
PP
Supply Current (Erase)
V
PP
= V
PPH
2
5
mA
V
PP
= V
DD
0.2
5
μA
I
PP2
V
PP
Supply Current (Read)
V
PP
≤
V
DD
0.2
5
μA
I
PP3(1)
V
PP
Supply Current (Standby)
V
PP
≤
V
DD
0.2
5
μA
相關PDF資料
PDF描述
M58WR032F-ZB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
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相關代理商/技術參數(shù)
參數(shù)描述
M58WR032FB80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
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