參數(shù)資料
型號： M58WR032FB80ZB6F
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述： 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 66/86頁
文件大小： 1306K
代理商： M58WR032FB80ZB6F
M58WR032FT, M58WR032FB
66/86
Table 38. Bank and Erase Block Region 1 Information
M58WR032FT (top)
M58WR032FB(bottom)
Description
Offset
Data
Offset
Data
(P+1A)h = 53h
07h
(P+1A)h = 53h
01h
Number of identical banks within Bank Region 1
(P+1B)h = 54h
00h
(P+1B)h = 54h
00h
(P+1C)h = 55h
11h
(P+1C)h = 55h
11h
Number of program or erase operations allowed in Bank
Region 1:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+1D)h = 56h
00h
(P+1D)h = 56h
00h
Number of program or erase operations allowed in other banks
while a bank in same region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+1E)h = 57h
00h
(P+1E)h = 57h
00h
Number of program or erase operations allowed in other banks
while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+1F)h = 58h
01h
(P+1F)h = 58h
02h
Types of erase block regions in Bank Region 1
n = number of erase block regions with contiguous same-size
erase blocks.
Symmetrically blocked banks have one blocking region.
(2)
(P+20)h = 59h
07h
(P+20)h = 59h
07h
Bank Region 1 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+21)h = 5Ah
00h
(P+21)h = 5Ah
00h
(P+22)h = 5Bh
00h
(P+22)h = 5Bh
20h
(P+23)h = 5Ch
01h
(P+23)h = 5Ch
00h
(P+24)h = 5Dh
64h
(P+24)h = 5Dh
64h
Bank Region 1 (Erase Block Type 1)
Minimum block erase cycles × 1000
(P+25)h = 5Eh
00h
(P+25)h = 5Eh
00h
(P+26)h = 5Fh
01h
(P+26)h = 5Fh
01h
Bank Region 1 (Erase Block Type 1): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved 5Eh 01 5Eh 01
(P+27)h = 60h
03h
(P+27)h = 60h
03h
Bank Region 1 (Erase Block Type 1): Page mode and
synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+28)h = 61h
06h
Bank Region 1 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+29)h = 62h
00h
(P+2A)h = 63h
00h
(P+2B)h = 64h
01h
(P+2C)h = 65h
64h
Bank Region 1 (Erase Block Type 2)
Minimum block erase cycles × 1000
(P+2D)h = 66h
00h
相關(guān)PDF資料
PDF描述
M58WR032F-ZB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZBT RECTIFIER SCHOTTKY SINGLE 1A 40V 25A-ifsm 0.9V-vf 10mA-ir DO-41 5K/REEL-13
M58WR032FB DIODE, SCHOTTKY, 20V, 3A.
M58WR032FT60ZB6E 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6F 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR032FB80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
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