參數(shù)資料
型號: M58WR032FT60ZB6T
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 2M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封裝: 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
文件頁數(shù): 30/86頁
文件大小: 1516K
代理商: M58WR032FT60ZB6T
Obsolete
Product(s)
- Obsolete
Product(s)
M58WR032FT, M58WR032FB
36/86
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 14. Exact erase times may change depending
on the memory array condition. The best case is
when all the bits in the block or bank are at ‘0’ (pre-
programmed). The worst case is when all the bits
in the block or bank are at ‘1’ (not prepro-
grammed). Usually, the system overhead is negli-
gible with respect to the erase time.
In the M58WR032FT/B the maximum number of
Program/ Erase cycles depends on the VPP volt-
age supply used.
Table 14. Program/Erase Times and Endurance Cycles
Parameter
Condition
Min
Typ
Typical after
100k W/E
Cycles
Max
Unit
V
PP
=
V
DD
Erase
Parameter Block (4 KWord)(2)
0.3
1
2.5
s
Main Block (32
KWord)
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Bank (4Mbit)
Preprogrammed
3
s
Not Preprogrammed
4.5
s
Program(3)
Word
10
100
s
Parameter Block (4 KWord)
32
ms
Main Block (32 KWord)
256
ms
Suspend Latency
Program
5
10
s
Erase
5
20
s
Program/Erase
Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
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