參數(shù)資料
型號： M58WR032FT60ZB6T
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 2M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封裝： 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
文件頁數(shù)： 59/86頁
文件大?。?/td> 1516K
代理商： M58WR032FT60ZB6T
Obsolete
Product(s)
- Obsolete
Product(s)
M58WR032FT, M58WR032FB
62/86
Table 32. CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
1.7V
1Ch
0020h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
2V
1Dh
00B4h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
11.4V
1Eh
00C6h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
12.6V
1Fh
0004h
Typical time-out per single byte/word program = 2n s
16s
20h
0000h
Typical time-out for multi-Byte programming = 2n s
NA
21h
000Ah
Typical time-out per individual block erase = 2n ms
1s
22h
0000h
Typical time-out for full chip erase = 2n ms
NA
23h
0003h
Maximum time-out for word program = 2n times typical
128s
24h
0000h
Maximum time-out for multi-Byte programming = 2n times typical
NA
25h
0002h
Maximum time-out per individual block erase = 2n times typical
4s
26h
0000h
Maximum time-out for chip erase = 2n times typical
NA
相關(guān)PDF資料
PDF描述
M58WR064EBZB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128EBZB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M5913 COMBINED SINGLE CHIP PCM CODEC AND FILTER
M5913B1 COMBINED SINGLE CHIP PCM CODEC AND FILTER
M5F78M05 5 V FIXED POSITIVE REGULATOR, PSFM3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR032FT70ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT70ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT70ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT80ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*