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參數(shù)資料
| 型號： | M59BW10225N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
| 中文描述： | 1兆位64Kb的x16插槽，突發(fā)低電壓快閃記憶體 |
| 文件頁數(shù)： | 1/24頁 |
| 文件大?。?/td> | 181K |
| 代理商： | M59BW10225N1T |
1/24
PRELIMINARY DATA
March 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M59BW102
1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory
I
2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM,
ERASE and READ OPERATIONS
I
SEQUENTIAL CYCLE TIME: 25ns
I
RANDOM ACCESS TIME
I
PROGRAMMING TIME: 10μs typical
I
INTERLEAVED ACCESS TIME: 16ns
I
CONTINUOUS MEMORY INTERLEAVING
– Unlimited Linear Access Data Output
I
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Word-by-Word
– Status Register bits
I
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
I
100,000 PROGRAM/ERASE CYCLES
I
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: C1h
DESCRIPTION
The M59BW102 is a non-volatile memory that may
be erased electrically at the chip level and pro-
grammed in-system on a Word-by-Word basis us-
ing only a single 3V V
CC
supply. For Program and
Erase operations the necessary high voltages are
generated internally. The device can also be pro-
grammed in standard programmers.
The device can be programmed and erased over
100,000 cycles.
Instructions for Read/Reset, Auto Select for read-
ing the Electronic Signature, Programming and
Chip Erase are written to the device in cycles of
commands to a Command Interface using stan-
dard
microprocessor
M59BW102 features an interleaved access mo-
dality which allows extremely fast access time.
The device is offered in TSOP40 (10 x 14mm)
package.
write
timings.
The
Figure 1. Logic Diagram
AI02763B
16
A0-A15
W
DQ0-DQ15
VCC
M59BW102
E
VSS
16
G
ALE
TSOP40 (N)
10 x 14mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59BW102N | 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
| M59DR008 | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100N1T | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
| M59DR008E100N6T | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
| M59DR008E100ZB1T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59BW102N | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
| M59DR008 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
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