參數(shù)資料
型號： M59BW10225N1T
廠商： 意法半導(dǎo)體
英文描述： 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
中文描述： 1兆位64Kb的x16插槽，突發(fā)低電壓快閃記憶體
文件頁數(shù)： 13/24頁
文件大?。?/td> 181K
代理商： M59BW10225N1T
13/24
M59BW102
Table 14. Write AC Characteristics, Write Enable Controlled
(T
A
= 0 to 70°C)
Symbol
Alt
Parameter
M59BW102
Unit
25
V
CC
= 3.0V to 3.6V
Min
Max
t
AVAV
t
WC
Address Valid to Next Address Valid
55
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
0
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
30
ns
t
DVWH
t
DS
Input Valid to Write Enable High
25
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
20
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
35
ns
t
GHWL
Output Enable High to Write Enable Low
0
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
50
μs
t
WHGL
t
OEH
Write Enable High to Output Enable Low
0
ns
Figure 9. Write AC Waveforms, W Controlled
Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W; ALE must be High.
AI02769
E
G
W
A0-A15
DQ0-DQ15
VALID
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL
相關(guān)PDF資料
PDF描述
M59BW102N 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
M59DR008 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N1T Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
M59DR008E100N6T Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
M59DR008E100ZB1T 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M59BW102N 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
M59DR008 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*