參數(shù)資料
型號: M59BW10225N1T
廠商: 意法半導體
英文描述: 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
中文描述: 1兆位64Kb的x16插槽,突發(fā)低電壓快閃記憶體
文件頁數(shù): 22/24頁
文件大?。?/td> 181K
代理商: M59BW10225N1T
M59BW102
22/24
Table 21. Ordering Information Scheme
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-
vice, please contact the ST Sales Office nearest to you.
Example:
M59BW102
25
N
1
T
Device Type
M59
Architecture
B = Burst Mode
Operating Voltage
W = V
CC
= 2.7 to 3.6V
Device Function
102 = 1 Mbit (64Kb x16)
Speed
25 = 25 ns sequential cycle time, 55 ns random access time
Package
N = TSOP40: 10 x 14 mm
Temperature Range
1 = 0 to 70 °C
Option
T = Tape & Reel Packing
相關PDF資料
PDF描述
M59BW102N 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
M59DR008 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N1T Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
M59DR008E100N6T Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
M59DR008E100ZB1T 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
M59BW102N 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
M59DR008 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory