參數資料
型號： M59DR032B120ZB1T
廠商： 意法半導體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
中文描述： 32兆位的2Mb x16插槽，雙行，第低壓閃存
文件頁數： 10/38頁
文件大小： 270K
代理商： M59DR032B120ZB1T
M59DR032A, M59DR032B
10/38
Block Protect (BP), Block Unprotect (BU),
Block Lock (BL) Instructions.
All blocks are
protected at power-up. Each block of the array has
two levels of protection against program or erase
operation. The first level is set by the Block Protect
instruction; a protected block cannot be pro-
grammed or erased until a Block Unprotect in-
struction is given for that block. A second level of
protection is set by the Block Lock instruction, and
requires the use of the WP pin, according to the
following scheme:
– when WP is at V
IH
, the Lock status is overridden
and all blocks can be protected or unprotected;
– when WP is at V
IL
, Lock status is enabled; the
locked blocks are protected, regardless of their
previous protect state, and protection status
cannot be changed. Blocks that are not locked
can still change their protection status, and pro-
gram or erase accordingly;
– the lock status is cleared for all blocks at power
up; once a block has been locked state can be
cleared only with a reset command. The protec-
tion and lock status can be monitored for each
block using the Autoselect (AS) instruction. Pro-
tected blocks will output a ‘1’ on DQ0 and locked
blocks will output a ‘1’ on DQ1.
Refer to Table 13 for a list of the protection states.
Block Erase (BE) Instruction.
This
uses a minimum of six write cycles. The Erase
Set-up command 80h is written to address 555h
on third cycle after the two Coded cycles. The
Block Erase Confirm command 30h is similarly
written on the sixth cycle after another two Coded
cycles and an address within the block to be
erased is given and latched into the memory.
instruction
Table 13. Protection States
(1)
Note: 1. All blocks are protected at power-up, so the default configuration is 001 or 101 according to WP status.
2. Current state and Next state gives the protection status of a block. The protection status is defined by the write protect pin and by
DQ1 (= 1 for a locked block) and DQ0 (= 1 for a protected block) as read in the Autoselect instruction with A1 = V
IH
and A0 = V
IL
.
3. Next state is the protection status of a block after a Protect or Unprotect or Lock command has been issued or after WP has changed
its logic value.
4. A WP transition to V
IH
on a locked block will restore the previous DQ0 value, giving a 111 or 110.
Current State
(2)
(WP, DQ1, DQ0)
Program/Erase
Allowed
Next State After Event
(3)
Protect
Unprotect
Lock
WP transition
100
yes
101
100
111
000
101
no
101
100
111
001
110
yes
111
110
111
011
111
no
111
110
111
011
000
yes
001
000
011
100
001
no
001
000
011
101
011
no
011
011
011
111 or 110
(4)
Additional block Erase Confirm commands and
block addresses can be written subsequently to
erase other blocks in parallel, without further Cod-
ed cycles. All blocks must belong to the same
bank of memory; if a new block belonging to the
other bank is given, the operation is aborted. The
erase will start after an erase timeout period of
100μs. Thus, additional Erase Confirm commands
for other blocks must be given within this delay.
The input of a new Erase Confirm command will
restart the timeout period. The status of the inter-
nal timer can be monitored through the level of
DQ3, if DQ3 is '0' the Block Erase Command has
been given and the timeout is running, if DQ3 is '1',
the timeout has expired and the P/E.C. is erasing
the Block(s). If the second command given is not
an erase confirm or if the Coded cycles are wrong,
the instruction aborts, and the device is reset to
Read Array. It is not necessary to program the
block with 00h as the P/E.C. will do this automati-
cally before erasing to FFh. Read operations with-
in the same bank, after the sixth rising edge of W
or E, output the status register bits.
During the execution of the erase by the P/E.C.,
the memory accepts only the Erase Suspend ES
instruction; the Read/Reset RD instruction is ac-
cepted during the 100μs time-out period. Data
Polling bit DQ7 returns '0' while the erasure is in
progress and '1' when it has completed. The Tog-
gle bit DQ6 toggles during the erase operation,
and stops when erase is completed.
After completion the Status Register bit DQ5 re-
turns '1' if there has been an erase failure. In such
a situation, the Toggle bit DQ2 can be used to de-
termine which block is not correctly erased. In the
case of erase failure, a Read/Reset RD instruction
is necessary in order to reset the P/E.C.
相關PDF資料
PDF描述
M59DR032B120ZB6T 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032BN 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M5L23TGN 3.2x5 mm, 3.3 or 5.0 Volt, HCMOS, Clock Oscillator
M5M29KE131BTP 134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
M5M5256DFP 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
相關代理商/技術參數
參數描述
M59DR032B120ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032BN 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032BZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032C100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032C100N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*