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參數(shù)資料
| 型號(hào)： | M5M29KE131BTP |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY |
| 中文描述： | 134217728位（16,777,216 - Word的8位/ 8388608字由16位）的CMOS閃存 |
| 文件頁數(shù)： | 1/33頁 |
| 文件大小： | 336K |
| 代理商： | M5M29KE131BTP |
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M5M29KE131BTP
Renesas LSIs
Rev.1.1_48a_bezz
1
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT)
CMOS FLASH MEMORY
Stacked-uMCP (micro Multi Chip Package)
PIN CONFIGURATION (TOP VIEW)
Digital Cellar Phone, Telecommunication,
PDA, Car Navigation System, Video Game Machine
DESCRIPTION
The M5M29KE131BTP is a Stacked micro Multi Chip
Package that contents 2 Dies of 64M-bit Flash memory in a
52-pin TSOP(II) for lead free use.
128M-bit Flash memory is a 16,777,216 bytes / 8,388,608
words, single power supply and high performance non-
volatile memory fabricated by CMOS technology for the
peripheral circuit and DINOR IV (Divided bit-line NOR IV)
architecture for the memory cell. All memory blocks are
locked and can not be programmed or erased, when WP# is
Low. Using Software Lock Release function, program or
erase operation can be executed.
FEATURES
Access time
Random
Page
70ns (Max.)
25ns(Max.)
VCC= 3.0 ~ 3.6V
Ta=-40 ~ 85
°
C
Supply voltage
Ambient temperature
Package
52pin TSOP(Type-II), Lead pitch 0.4mm
Outer-lead finishing : Sn-Cu
APPLICATION
VCC
GND
A0-A22
DQ0-DQ15
CE#
OE#
: VCC
: GND
: Address
: Data I/O
: Chip enable
: Output enable
WE#
GND(WP#)
: Write enable
: Write protect (recommend to fix to GND)
(Background information No. : REJ06C0052)
: Reset power down
: Byte enable
RP#
BYTE#
M5M29KE131BTP
The M5M29KE131BTP is suitable for a high performance cellular
phone and a mobile PC that are required to be small mounting
area, weight and small power dissipation.
Outline
52PTG-A
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31
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A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
RP #
GND(WP#)
NC
A22
A21
A20
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE#
NC
GND
NC
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
GND
CE#
A0
10.49 mm
1
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| M5M29KE131BVP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package) |
| M5M29VB320VP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29VT320VP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WB160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WB160BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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