參數(shù)資料
型號: M5M29FT800RV-80
廠商: Mitsubishi Electric Corporation
英文描述: 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述: 8,388,608位(1048,576 - 576 - Word的8位/ 524,288字BY16位)的CMOS 3.3只,塊擦除閃存
文件頁數(shù): 10/14頁
文件大?。?/td> 151K
代理商: M5M29FT800RV-80
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
May 1997 , Rev.6.1
10
AC WAVEFORMS FOR ERASE OPERATIONS (/WE control
)
41H
DIN
t
WPH
t
WP
t
DS
t
DH
t
CS
t
CH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
A
7
~A
18
ADDRESS VALID
/CE
/OE
/WE
DATA
RY/BY
t
AH
V
IH
/BYTE
V
OH
V
OL
V
IL
/BYTE
=
V
IL
(
A
-1
~
A
6
)
/BYTE
=
V
IH
(
A
0
~
A
6
)
00H
01H
FFH
02H~FEH
t
AS
DIN
DIN
SRD
DIN
V
IH
V
IL
t
OEH
t
DAE,
t
DAP
t
WHRL
PROGRAM
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
AC WAVEFORMS FOR PAGE PROGRAM OPERATION
(/WE
control
)
FFH
t
PS
V
IH
V
IL
V
IH
/RP
V
IL
/WP
t
WPH
t
WPS
V
HH
20H
D0H
t
WPH
t
WP
t
DS
t
DH
t
CS
t
CH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
RY/BY
t
AH
V
IH
V
OH
V
OL
V
IL
ADDRESSES
t
AS
FFH
SRD
t
OEH
t
DAP
,t
DAE
t
WHRL
ADDRESS VALID
ERASE
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
V
IL
V
IH
V
IL
V
IH
t
PS
/BYTE
/CE
/OE
/WE
DATA
/RP
/WP
t
BLS
t
BLH
V
HH
7FH
02H~7EH
01H
00H
t
a(CE)
t
a(OE)
t
BLH
t
BLS
V
IH
V
IL
t
BS
t
BH
t
a(OE)
t
a(CE)
t
WPS
t
WPH
V
IH
V
IL
t
BS
t
BH
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M5M29FT800FP 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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參數(shù)描述
M5M29FT800VP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FT800VP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FT800VP-12 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB160BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY