- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370969 > M5M29GB (Mitsubishi Electric Corporation) 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | M5M29GB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 16,777,216位（1048,576字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁數(shù)： | 1/23頁 |
| 文件大?。?/td> | 200K |
| 代理商： | M5M29GB |
MITSUBISHI LSIs
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T161BWG
Sep.1999. Rev4.0
1
DESCRIPTION
The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with
alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in
one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for
mobile and personal computing, and communication products. The M5M29GB/T161BWG are fabricated by CMOS technology for the
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 6x8-balls CSP (0.75mm ball
pitch) .
FEATURES
PIN CONFIGURATION (TOP VIEW)
APPLICATION
Digital Cellular Phone
Telecommunication
Mobile Computing Machine
PDA (Personal Digital Assistance)
Car Navigation System
Video Game Machine
Boot Block
M5M29GB161BWG Bottom Boot
M5M29GT161BWG Top Boot
Other Functions
Soft Ware Command Control
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
Status Register Read
Alternating Back Ground Program/Erase Operation
Between Bank(I) and Bank(II)
Package
7mm x 8.5mm CSP (Chip Scale Package)
- 6 x 8 balls, 0.75mm ball pitch
NC : NO CONNECTION
INDEX
M5M29GB/T161BWG
CSP(0.75mm ball pitch):48FJA
16-bit version
A13
A11
A14
A15
A12
A10
WE#
A8
A9
A16
NC
GND
D15
D7
D5
D6
D13
WP2#
RP#
WP1#
A18
D11
D12
D4
VCC
D3
D2
D10
D1
OE#
D0
GND
D8
CE#
A0
A1
A3
A6
A2
A5
A17
A4
A7
D14
D9
NC
NC
8.5mm
7
A
B
C
D
E
F
G
H
6
5
4
3
2
1
A19
Organization 1048,576 word x 16bit
(M5M29GB/T161BWG)
Supply voltage
................................
V
CC
= 2.7~3.6V
Access time 90ns (Max.)
Power Dissipation
Read 54 mW (Max. at 5MHz)
(After Automatic Power saving) 0.33
μ
W (typ.)
Program/Erase 126 mW (Max.)
Standby 0.33
μ
W (typ.)
Deep power down mode 0.33
μ
W (typ.)
Auto program for Bank(I)
Program Time 4ms (typ.)
Program Unit
(Byte Program) 1word
(Page Program) 128word
Auto program for Bank(II)
Program Time 4ms (typ.)
Program Unit 128word
Auto Erase
Erase time 40 ms (typ.)
Erase Unit
Bank(I) Boot Block 16Kword x 1
Parameter Block 16Kword x 7
Bank(II) Main Block 32Kword x 28
Program/Erase cycles 100Kcycles
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M417400CJ-5 | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CJ-5S | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CJ | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-5 | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-5S | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29GB160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BVP-80 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。