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參數(shù)資料
| 型號(hào)： | M5M4V16169DRT-15 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| 中文描述： | 16MCDRAM：16米（100萬(wàn)字由16位）與16K的緩存內(nèi)存（1024字由16位）的SRAM |
| 文件頁(yè)數(shù)： | 16/64頁(yè) |
| 文件大小： | 737K |
| 代理商： | M5M4V16169DRT-15 |
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M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MODE DESCRIPTIONS (9)
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
DRAM Write
Transfer4
DRAM Write
Transfer4
& Read
Data (8X16 Block) is transferred from WB2 to the DRAM block specified by Addresses Ad3-
Ad7. Addresses Ad8-Ad9 must be set to Low. The Mask present in Byte MaskRegister
controls the data written to the DRAM. With the DWT4 function, the WB2 data and WB2 Mask
remain unchanged. (Note 4,5)
Data (8X16 Block) is transferred from WB2 to the DRAM block specified by Addresses Ad3-
Ad7. Addresses Ad8-Ad9 must be set to Low. The Mask present in Byte MaskRegister
controls the data written to the DRAM. With the DWT4R function, the WB2 data and WB2
transfer mask remain unchanged. The block to which the data is written in DRAM is
simultaneously transferred to the Read Buffer. (Notes 1,2,4,5)
16
X
DQs
SRAM
1KX16
8X16
8X16
8X16
8X16
8X16
16bits
16bits
16bits
As3-9
1of128Decode
SRAM RowDecoder
DRAM
256KX16
Ad0-11
1of4096Decode
Ad3-7
1of32
Decode
As0-2
1of8
Decode
As0-2
1of8Decode
8X16Block
8X16Block
WB1
Upper Byte
Lower Byte
Upper Byte
Lower Byte
DRAM RowDecoder
16bits
As0-2
1of8Decode
Lower Byte
RB2
Lower Byte
RB1
DQs
SRAM
1KX16
8X16
8X16
8X16
8X16
8X16
16bits
16bits
As3-9
1of128Decode
SRAM RowDecoder
DRAM
256KX16
Ad0-11
1of4096Decode
Ad3-7
1of32
Decode
As0-2
1of8
Decode
As0-2
1of8Decode
8X16Block
8X16Block
Upper Byte
Lower Byte
Upper Byte
Lower Byte
DRAM RowDecoder
16bits
As0-2
1of8Decode
Lower Byte
RB2
Lower Byte
RB1
WB1
X
16bits
DQ8-15
DQ0-7
DQ8-15
DQ0-7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M4V16169DRT-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-15 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
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