參數(shù)資料
型號： M5M4V16169DRT-15
廠商： Mitsubishi Electric Corporation
英文描述： 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
中文描述： 16MCDRAM：16米（100萬字由16位）與16K的緩存內(nèi)存（1024字由16位）的SRAM
文件頁數(shù)： 5/64頁
文件大小： 737K
代理商： M5M4V16169DRT-15
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
5
FUNCTION TRUTH TABLE
DO: Data Out
DIN: Data In
WB1: Write Buffer 1
WB2: Write Buffer 2
RB: Read Buffer
Function
Din --> SRAM
Din --> WB1
SRAM --> WB1
WB1 --> WB2
WB2 --> DRAM
Data Transferred (max)
8/16 bits
8/16bits
128 bits (8X16bit-block)
128 bits (8X16bit-block)
128 bits (8X16bit-block)
(5)
(5)
Function
WB2 --> RB
DRAM --> RB
RB --> Dout
RB --> SRAM
Data Transferred (max)
128 bits (8X16bit-block)
128 bits (8X16bit-block)
8/16 bits
128 bits (8X16bit-block)
(5)
Data Transfer Buffers
Write Buffers
Xfer Masks
WB1
Mask
Clear
Mask
WB1
Read
Buffer
RB1,2
Din
Dout
Function
DQ pin
No Operation
Hi-Z
Deselect SRAM
SRAM Read
SRAM->DO
SRAM Write
DIN->SRAM
Buffer Read Xfer
Use
Hi-Z
RB2->SRAM
DRAM Power Down
Buffer Read
Valid
Use
RB2->DO
Buffer Write
Valid
Hi-Z
DIN->WB1
Buffer Read Xfer & Read
Valid
Use
RB2->SRAM->DO
Auto Refresh
Set Command Register
Buffer Write Xfer
SRAM->WB1
Valid
Hi-Z
DIN->SRAM->WB1
DRAM No OPeration
DRAM Activate
DRAM Precharge
DRAM Read Xfer
Load
DRAM->RB1->RB2
DRAM Write Xfer1
WB1->WB2->DRAM
Load
DRAM Write Xfer1& Read
WB1->WB2
->DRAM->RB1->RB2
DRAM Write Xfer2
WB2->DRAM
Load
DRAM Write Xfer2& Read
WB2->DRAM
->RB1->RB2
Self Refresh Entry
Page Call
Clear 1
Use
WB2
Clear
Mask
WB2
Mask
Use
Load/
Use
Use
Use
Load/
Use
Load/
Use
Load/
Use
Use
Use
Use
Use
Load
Load
Load
-
-
-
-
-
(6)
(6)
(4)
(3)
(3)
No operation
No operation
SRAM Power Down&
Data retention
DRAM Power Down
Suspend
No operation
-
Hi-Z
No operation
Buffer Read Xfer & Read
Valid
Hi-Z
Valid
Hi-Z
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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-
-
-
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-
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Hi-Z
-
-
-
-
Byte
mask
-
No operation
DRAM Write Xfer3
WB1->WB2->DRAM
Load
DRAM Write Xfer3& Read
WB1->WB2
->DRAM->RB1->RB2
DRAM Write Xfer4
WB2->DRAM
Load
DRAM Write Xfer4& Read
WB2->DRAM->RB
Use
Use
Load/
Use
Load/
Use
-
-
Use
Use
(3)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Load
-
-
Load
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V16169DRT-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DRT-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
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