參數(shù)資料
型號(hào): M5M4V16169DRT-7
廠商: Mitsubishi Electric Corporation
英文描述: 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
中文描述: 16MCDRAM:16米(100萬(wàn)字由16位)與16K的緩存內(nèi)存(1024字由16位)的SRAM
文件頁(yè)數(shù): 50/64頁(yè)
文件大?。?/td> 737K
代理商: M5M4V16169DRT-7
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
K
CMd#
Page-Mode DRAM Read Transfer Latency set=4
2
3
4
5
6
7
8
9
10
11
12
13
14
1
RAS#
CAS#
DTD#
Ad0-2
Ad3-11
RB
Old Data
**C1
CS#
Ad0-Ad2=Low
ACT
DRT
DPD
DNOP
DNOP
BR
BR
BR
BR
BR
BR
BR
BR
BR
DQ0-15
tRCD
Row
Row
tCBF
tRASP
tRSH
Old
Old
Old
Old
DRAM
SRAM
DRT
PCG
DNOP
DNOP
**C2
**C3
tCBF
C1
C3
Q1
Q1
Q1
Q1
Q1
Q3
tPC
BR
BR
BR
BR
BR
Old
If next DRT happens within the latency,
new data does not transferred to RB.
However this operation is not guaranteed.
DRT
DNOP
DNOP
Q1
Old
DNOP
Old
50
RB
Old Data
Latency x t
K
C1
C3
Latency x t
K
tCBF
C2
SRAM operation can be freely performed.
** Ad3-Ad7 are column block addresses (Ad8~Ad11=Low).
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M5M4V16169DTP-10 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-15 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-7 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM