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參數(shù)資料
| 型號： | M5M5W816WG-85HI |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| 中文描述： | 8388608位（524288字由16位）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 102K |
| 代理商： | M5M5W816WG-85HI |
MITSUBISHI ELECTRIC
M5M5W816WG - 85HI
2001.4.11 Ver. 2.0
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
PRELIMINARY
Some parametric limits are subject to change
* Typical parameter indicates the value for the
center
of distribution, and is not 100% tested.
1
DESCRIPTION
The M5M5W816 is a family of low voltage 8-Mbit static RAMs
organized as 524288-words by 16-bit, fabricated by Mitsubishi's
high-performance 0.18μm CMOS technology.
The M5M5W816 is suitable for memory applications where a
simple interfacing , battery operating and battery backup are the
important design objectives.
M5M5W816WG is packaged in a CSP (chip scale package),
with the outline of 7.5mm x 8.5mm, ball matrix of 6 x 8 (48ball)
and ball pitch of 0.75mm. It gives the best solution for a
compaction
of mounting area as well as flexibility of wiring pattern of printed
circuit boards.
FEATURES
- Single 2.7~3.0V power supply
- Small stand-by current: 0.1μA (2V, typ.)
- No clocks, No refresh
- Data retention supply voltage =2.0V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S1#, S2, BC1#
and BC2#
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE prevents data contention in the I/O bus
- Process technology: 0.18μm CMOS
- Package: 48ball 7.5mm x 8.5mm CSP
PIN CONFIGURATION
A0
~ A18
DQ1 ~ DQ16
S1#
S2
W#
OE#
BC1#
BC2#
Address input
Data input / output
Chip select input 1
Chip select input 2
Write control input
Output enable input
Lower Byte (DQ1 ~ 8)
Upper Byte (DQ9 ~ 16)
Pin
Function
Vcc
GND
Power supply
Ground supply
(TOP VIEW)
Those are summarized in the part name table below.
40mA
(10MHz)
10mA
(1MHz)
Version,
Operating
temperature
Part name
Power
Supply
Access time
max.
Stand-by current
Ratings (max.)
25°C
40°C
25°C 40°C
Active
current
Icc1
* ( typ.)
70°C
85°C
85ns
2.7 ~ 3.0V
I-version
-40 ~ +85°C
M5M5W816WG -
85HI
* Typical
40
4
20
2
1.0
0.5
NC : No Connection
*Don't connect E3 ball to voltage level more than 0V
1
2
3
4
5
6
A
B
C
D
E
F
G
D Q 3
A7
D Q 1
S2
VCC
GND
D Q 6
A2
S1#
D Q 2
D Q 4
D Q 5
D Q 7
A1
A4
A6
A5
A17
A16
A15
A0
A3
A14
OE#
BC2#
DQ15
DQ13
DQ12
DQ10
BC1#
DQ16
DQ14
GND
VCC
D Q 11
D Q 8
W #
A13
A12
N.C.
D Q 9
N.C.
A11
A10
A9
A8
H
A18
NC or
GND
Outline : 48F7Q
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M5W816WG-85H | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-85L | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-85LI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-10H | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-10HI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
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