參數(shù)資料
型號: M68AW512DZB
廠商: 意法半導體
英文描述: 8 Mbit 512K x16 3.0V Asynchronous SRAM
中文描述: 8兆位為512k x16 3.0V異步SRAM
文件頁數(shù): 13/19頁
文件大?。?/td> 296K
代理商: M68AW512DZB
13/19
M68AW512M
Figure 12. UB/LB Controlled, Write AC Waveforms
Note: 1. During this period DQ0-DQ15 are in output state and input signals should not be applied.
AI05843
tAVAV
tBHAX
tDVBH
DATA INPUT
A0-A18
E
W
DQ0-DQ15
VALID
tAVBH
tBHDX
tBLBH
UB, LB
DATA
(1)
tAVBL
tELBH
tWLBH
相關(guān)PDF資料
PDF描述
M68AW512MN70ND1T 8 Mbit (512K x16) 3.0V Asynchronous SRAM
M68AW512MN70ND6T 8 Mbit (512K x16) 3.0V Asynchronous SRAM
M68HC12A4EVB Primarily as an Expanded Mode Microcontroller
M68HC12B Microcontrollers
M68HC705UGANG High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M68AW512M 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM
M68AW512ML55ND1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM
M68AW512ML55ND6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM
M68AW512ML70ND1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM
M68AW512ML70ND6 功能描述:靜態(tài)隨機存取存儲器 WIRELESS FLASH RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray