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參數(shù)資料
| 型號： | M6MGB331S8BKT |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| 中文描述： | 33554432位（2,097,152 -文字由16位/ 4194304 - Word的8位）的CMOS閃存 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 136K |
| 代理商： | M6MGB331S8BKT |
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
Rev.0.1.48a_bebz
1
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS
FLASH MEMORY &
8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM
Stacked -
μ
MCP (micro Multi Chip Package)
M6MGB/T331S8BKT
Renesas LSIs
The M6MGB/T331S8BKT is a Stacked micro Multi Chip
Package (S-
μ
MCP) that contents 32M-bit Flash memory
and 8M-bit Static RAM in a 52-pin TSOP for lead free use.
32M-bit Flash memory is a 4,194,304 bytes / 2,097,152
words, , single power supply and high performance non-
volatile memory fabricated by CMOS technology for the
peripheral circuit and DINOR (Divided bit-line NOR IV)
architecture for the memory cell. All memory blocks are
locked and can not be programmed or erased, when F-WP#
is low. Using Software Lock Release function, program or
erase operation can be executed.
8M-bit SRAM is a 1,048,576 bytes / 524,288 words
asynchronous SRAM fabricated by CMOS technology for the
peripheral circuit .
The M6MGB/T331S8BKT is suitable for a high
performance cellular phone and a mobile PC that are
required to be small mounting area, weight and small
power dissipation
Features
Access Time
Flash
70ns (Max.)
SRAM
85ns (Max.)
Supply Voltage
VCC=2.7 ~ 3.0V
Ambient Temperature
Ta=-40 ~ 85
°
C
Package
52pin TSOP(Type-II),
Lead pitch 0.4mm
Outer-lead finishing:Sn-Cu
Application
Outline
52PTJ-A
Mobile communication products
Description
PIN CONFIGURATION (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
A15
A14
A13
A12
A11
A10
A9
A8
A19
S-CE1#
WE#
F-RP#
F-WP#
S-VCC
S-CE2
DU
A20
A18
A17
A7
A6
A5
A4
A3
A2
A1
BYTE#
GND
S-LB#
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
F-VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
GND
F-CE#
A0
10.49 mm
A16
1
F-VCC
S-VCC
GND
A-1 - A18
A19 - A20
DQ0 - DQ15
F-CE#
S-CE1#
S-CE2
OE#
WE#
:Vcc for Flash
:Vcc for SRAM
:GND for Flash/SRAM
:Flash/SRAM common Address
:Address for Flash
:Data I/O
:Flash Chip Enable
:SRAM Chip Enable1
:SRAM Chip Enable2
:Flash/SRAM Output Enable
:Flash/SRAM Write Enable
F-WP#
F-RP#
BYTE#
S-LB#
S-UB#
DU
:Flash Write protect
:Flash Reset Power Down
:Flash/SRAM Byte Enable
:SRAM Lower Byte
:SRAM Upper Byte
:Do not use
M6MGB/T331S8BKT
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| M6MGD137W34DWG | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW34DWG | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW66CWG-P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGT160S2BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT160S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
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