參數(shù)資料
型號: M7040N
廠商: 意法半導體
英文描述: 64K x 72-bit Entry NETWORK PACKET SEARCH ENGINE
中文描述: 64K的× 72位的網(wǎng)絡數(shù)據(jù)包進入搜索引擎
文件頁數(shù): 130/159頁
文件大?。?/td> 1088K
代理商: M7040N
M7040N
130/159
SRAM READ with a Table of Up to Eight Devices
The following explains the SRAM READ operation
completed through a table of up to eight devices
using the following parameters: TLSZ = 01. Figure
97, page 131 diagrams a block of eight devices.
The following assumes that SRAM access is suc-
cessfully achieved through M7040N Device 0. Fig-
ure 98, page 132 and Figure 99, page 133 show
timing diagrams for Device 0 and Device 7, re-
spectively.
Cycle 1A:
The host ASIC applies the READ In-
struction on the CMD[1:0] using CMDV = 1. The
DQ Bus supplies the address, with DQ[20:19]
set to '10' to select the SRAM address. The host
ASIC selects the device for which ID[4:0] match-
es the DQ[25:21] lines. During this cycle the
host ASIC also supplies SADR[23:21] on
CMD[8:6].
Cycle 1B:
The host ASIC continues to apply the
READ Instruction
on
CMDV = 1. The DQ Bus supplies the address
the
CMD[1:0]
using
with DQ[20:19] set to '10' to select the SRAM
address.
Cycle 2:
The host ASIC floats DQ[71:0] to a 3-
state condition.
Cycle 3:
The host ASIC keeps DQ[71:0] in a 3-
state condition.
Cycle 4:
The selected device starts to drive
DQ[71:0].
Cycle 5:
The selected device continues to drive
DQ[71:0] and drives ACK from high-Z to low
Cycle 6:
The selected device drives the READ
address on SADR[23:0]. It also drives ACK
high, CE_L low, WE_L high, and ALE_L low.
Cycle 7:
The selected device drives CE_L,
ALE_L, WE_L, and the DQ Bus in a 3-state con-
dition. It continues to drive ACK low.
At the end of Cycle 7, the selected device floats
ACK in 3-state condition and a new command can
begin.
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