參數資料
型號: M93S56-WBN3TG
廠商: 意法半導體
元件分類: DRAM
英文描述: 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
中文描述: 4Kbit,2Kbit和1Kbit 16位寬MICROWIRE串行EEPROM的訪問與街區(qū)保護
文件頁數: 32/34頁
文件大?。?/td> 525K
代理商: M93S56-WBN3TG
M93S66, M93S56, M93S46
32/34
PART NUMBERING
Table 24. Ordering Information Scheme
Note: 1. ST strongly recommends the use of the Automotive Grade devices for use in an automotive environment. The High Reliability Cer-
tified Flow (HRCF) is described in the quality note QNEE9801. Please ask your nearest ST sales office for a copy.
2. Available only on new products: identified by the Process Identification letter W or G.
Devices are shipped from the factory with the
memory content set at all 1s (FFh).
For a list of available options (speed, package,
etc.) or for further information on any aspect of this
device, please contact your nearest ST Sales Of-
fice.
Table 25. How to Identify Current and New Products by the Process Identification Letter
Note: 1. This example comes from the S08 package. Other packages have similar information. For further information, please ask your ST
Sales Office for Process Change Notice PCN MPG/EE/0059 (PCEE0059).
Example:
M93S66
W MN
6
T
P
Device Type
M93 = MICROWIRE serial access EEPROM (x16) with
Block Protection
Device Function
66 = 4 Kbit (256 x 16)
56 = 2 Kbit (128 x 16)
46 = 1 Kbit (64 x 16)
Operating Voltage
blank = V
CC
= 4.5 to 5.5V
W = V
CC
= 2.5 to 5.5V
R = V
CC
= 1.8 to 5.5V
Package
BN = PDIP8
MN = SO8 (150 mil width)
DW = TSSOP8 (169 mil width)
DS
2
= TSSOP8 (3x3mm body size)
Device Grade
6 = Industrial: device tested with standard test flow over –40 to 85 °C
3 = Automotive: device tested with High Reliability Certified Flow
1
over –40 to 125 °C
Option
blank = Standard Packing
T = Tape & Reel Packing
Plating Technology
blank = Standard SnPb plating
P = Lead-Free and RoHS compliant
G = Lead-Free, RoHS compliant, Sb
2
O
3
-free and TBBA-free
Markings on Current Products
1
Markings on New Products
1
M93S46W6
AYWW
F
(or AYWW
M
)
M93S46W6
AYWW
W
(or AYWW
G
)
相關PDF資料
PDF描述
M93S56-WBN3T 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
M93S56-WBN3P 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
M93S56-WBN3G 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
M93S56-WBN3 Triple 3-Input Positive-NAND Gates 14-PDIP -40 to 85
M93S56-RMN6TP 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
相關代理商/技術參數
參數描述
M93S56-WBN3TP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
M93S56-WBN6 功能描述:電可擦除可編程只讀存儲器 5.5V 2K (128x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
M93S56-WBN6G 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
M93S56-WBN6P 功能描述:IC EEPROM 2KBIT 2MHZ 8DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.173",4.40mm 寬) 供應商設備封裝:8-MFP 包裝:帶卷 (TR)
M93S56-WBN6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection