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參數(shù)資料
| 型號： | M93S56-WBN3TG |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| 中文描述： | 4Kbit，2Kbit和1Kbit 16位寬MICROWIRE串行EEPROM的訪問與街區(qū)保護(hù) |
| 文件頁數(shù)： | 33/34頁 |
| 文件大小： | 525K |
| 代理商： | M93S56-WBN3TG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁當(dāng)前第33頁第34頁
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M93S66, M93S56, M93S46
REVISION HISTORY
Table 26. Document Revision History
Date
Rev.
Description of Revision
07-Mar-2002
2.0
Document reformatted, and reworded, using the new template. Temperature range 1 removed.
TSSOP8 (3x3mm) package added. New products, identified by the process letter W, added,
with fc(max) increased to 1MHz for -R voltage range, and to 2MHz for all other ranges (and
corresponding parameters adjusted).
26-Mar-2003
2.1
Value of standby current (max) corrected in DC characteristics tables for -W and -R ranges
V
OUT
and V
IN
separated from V
IO
in the Absolute Maximum Ratings table
14-Apr-2003
2.2
Values corrected in AC characteristics tables for -W range (tSLSH, tDVCH, tCLSL) for devices
with Process Identification Letter W.
23-May-2003
2.3
Standby current corrected for -R range. Four missing parameters restored to all AC
Characteristics tables
24-Nov-2003
3.0
Table of contents, and Pb-free options added. V
IL
(min) improved to -0.45V.
19-Apr-2004
4.0
Absolute Maximum Ratings for V
IO
(min) and V
CC
(min) changed. Soldering temperature
information clarified for RoHS compliant devices. Device Grade 3 clarified, with reference to
HRCF and automotive environments. Process identification letter “G” information added
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M93S56-WBN3T | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN3P | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN3G | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN3 | Triple 3-Input Positive-NAND Gates 14-PDIP -40 to 85 |
| M93S56-RMN6TP | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M93S56-WBN3TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN6 | 功能描述:電可擦除可編程只讀存儲器 5.5V 2K (128x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93S56-WBN6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN6P | 功能描述:IC EEPROM 2KBIT 2MHZ 8DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| M93S56-WBN6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
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