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參數(shù)資料
| 型號： | MA02206GJ |
| 英文描述： | 3.6V 0.5W RF Power Amplifier IC for DECT |
| 中文描述： | 3.6V的為0.5W射頻功率放大器IC面向DECT |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 112K |
| 代理商： | MA02206GJ |
3.6V 0.5W RF Power Amplifier IC
for DECT
MA02206GJ
FEATURES
=
Single Positive Supply
=
57% Power Added Efficiency
=
Operation down to 1.2 V
=
100% Duty Cycle
=
1800 to 2000 MHz Operation
=
8 Pin Full Downset MSOP Plastic Package
=
Accommodates Battery Charging Conditions up to
5.6 Volts
=
Self-Aligned MSAG
-Lite MESFET Process
Specifications subject to change without notice.
902407 E
North America:
Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific:
Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
8 Lead MSOP Package
Package bottom is electrical and thermal ground
DESCRIPTION
MAXIMUM RATINGS
(Beyond these limts, the device may be damaged or device
reliability reduced. Functional operation at absolute–maximum–rated conditions is not implied.)
Rating
DC Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature Range
Operating Temperature
Range
Moisture Sensitivity
Symbol
V
DD
P
IN
T
J
T
STG
T
OPER
Value
6.0
10
150
-40 to +150
-40 to +100
Unit
V
mW
°C
°C
°C
The MA02206GJ is a DECT Power amplifier
based on M/A-COM’s Self-Aligned MSAG
MESFET Process. This product is designed
for use in 3.6 V DECT handsets and base
stations.
JEDEC Level 1
ELECTRICAL CHARACTERISTICS
V
DD
= +3.6 V, P
IN
= -2 dBm, Duty Cycle = 100 %, T
S
= 37 °C (Note 1), measured on evaluation
board shown in Figure 9.
Characteristic
Frequency Range
Output Power
(1900 MHz)
Power Added Efficiency
(1900 MHz)
Drain Current
(1900MHz)
Harmonics
Input VSWR
Off Isolation
(V
DD
=0 V)
Thermal Resistance,
Junction to soldering point (T
s
) (Note 1)
Load Mismatch
(V
DD
= 4.5 V, VSWR = 5:1, P
IN
= -2 dBm)
Stability
(P
IN
= -2 to 2 dBm, V
DD
= 0-5.0 V, Load VSWR = 5:1, all phases)
Symbol
P
OUT
η
I
DD
2
o
3
o
—
—
—
—
—
Min
1880
25.9
52
Typ
1900
26.9
57
228
-37
-38
1.3:1
44
25
Max
1930
27.9
330
-30
-34
2.0:1
Unit
MHz
dBm
%
mA
dBc
—
dB
°
C/W
38
No Degradation in Power Output
All non-harmonically related outputs more than
60 dB below desired signal
Note 1:
Note 2:
T
s
is the temperature measured at the soldering point of the downset paddle on the bottom of the IC.
Output power and efficiency have been optimized for input drive levels between –2 to +2 dBm. Stability is only specified within this range. For
operation outside of this range, contact the factory.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MA02206GJ_1 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:3.6 V, 0.5 W, RF Power Amplifier IC for DECT, 1800 - 2000 MHz |
| MA02301AF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.6V 0.5W RF Power Amplifier IC for 2.4 GHz ISM |
| MA02303GJ | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Amplifier IC for 2.4 GHz ISM |
| MA02303GJ_1 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Amplifier IC For 2.5 GHz ISM |
| MA02303GJ-R13 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Amplifier IC for 2.4 GHz ISM |
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