參數(shù)資料
型號(hào): MB814400A-80
廠商: Fujitsu Limited
英文描述: CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述: 的CMOS 4米× 1位快速頁(yè)面模式的DRAM的CMOS(4分× 1位快速頁(yè)面存取模式動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 14/27頁(yè)
文件大?。?/td> 347K
代理商: MB814400A-80
14
MB814400A-60/MB814400A-70/MB814400A-80
Fig. 8 – READ-MODIFY-WRITE-CYCLE
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
RAS
CAS
WE
A
0
to A
9
t
RWC
t
RAS
t
RCD
t
CRP
t
ASR
t
CAH
t
RWL
t
RCS
”H” or ”L”
t
RP
t
ASC
t
RAH
t
CWL
t
DS
t
DH
t
DZO
t
OEH
ROW
ADD
COL
ADD
t
RAD
t
CWD
t
WP
VALID
t
OEZ
t
RWD
t
AWD
t
DZC
HIGH-Z
t
CAC
t
RAC
t
AA
t
ON
t
ON
HIGH-Z
HIGH-Z
VALID
DATA IN
t
OEA
t
CAS
t
CSH
t
RSH
t
RAL
t
OED
V
IH
V
IL
V
IH
V
IL
DQ
(Input)
DQ
(Output)
OE
DESCRIPTION
The read-modify-write cycle is executed by changing WE from High to Low after the data appears on the DQ pins. In the read-modify-
write cycle, OE must be changed from Low to High after the memory access time.
相關(guān)PDF資料
PDF描述
MB814400C-60 CMOS 1 M ×4BIT Fast Page Mode DRAM(CMOS 1 M ×4 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814400C-70 CMOS 1 M ×4 BIT Fast Page Mode DRAM(CMOS 1 M ×4 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814400D-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814400D-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814405C-60 CMOS 1M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
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