參數(shù)資料
型號(hào)： MB814400A-80
廠商： Fujitsu Limited
英文描述： CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述： 的CMOS 4米× 1位快速頁(yè)面模式的DRAM的CMOS（4分× 1位快速頁(yè)面存取模式動(dòng)態(tài)內(nèi)存）
文件頁(yè)數(shù)： 19/27頁(yè)
文件大小： 347K
代理商： MB814400A-80
19
MB814400A-60/MB814400A-70/MB814400A-80
Fig. 13 – RAS-ONLY REFRESH (WE = OE = “H” or “L”)
Fig. 14 – CAS-BEFORE-RAS REFRESH (ADDRESSES = OE = “H” or “L”)
t
RC
V
IH
V
IL
RAS
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
CAS
A
0
to A
9
D
OUT
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
V
IH
V
IL
RAS
CAS
WE
DQ
(Output)
HIGH-Z
ROW ADDRESS
“H” or “L”
DESCRIPTION
Refresh of RAM memory cells is accomplished by performing a read, a write, or a read-modify-write cycle at each of 1024 row addresses
every 16.4-milliseconds. Three refresh modes are available: RAS-only refresh, CAS-before-RAS refresh, and hidden refresh.
RAS-only refresh is performed by keeping RAS Low and CAS High throughout the cycle; the row address to be refreshed is latched on
the falling edge of RAS. During RAS-only refresh, DQ pin is kept in a high-impedance state.
t
RAS
t
RP
t
RPC
t
RAH
t
ASR
t
CRP
t
OFF
t
OH
HIGH-Z
“H” or “L”
DESCRIPTION
CAS-before-RAS refresh is an on-chip refresh capability that eliminates the need for external refresh addresses. If CAS is held Low for
the specified setup time (t
CSR
) before RAS goes Low, the on-chip refresh control clock generators and refresh address counter are
enabled. An internal refresh operation automatically occurs and the refresh address counter is internally incremented in preparation for
the next CAS-before-RAS refresh operation.
WE must be held High for the specified set up time (t
WSR
) before RAS goes low in order not to enter “test mode”.
t
RC
t
RAS
t
RP
t
RPC
t
CHR
t
CSR
t
CPN
t
WSR
t
WHR
t
OFF
t
OH
相關(guān)PDF資料
PDF描述
MB814400C-60 CMOS 1 M ×4BIT Fast Page Mode DRAM(CMOS 1 M ×4 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814400C-70 CMOS 1 M ×4 BIT Fast Page Mode DRAM(CMOS 1 M ×4 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814400D-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814400D-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814405C-60 CMOS 1M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB814400C-70PJN 制造商:FUJITSU 功能描述:Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ
MB814405D-60PJN 制造商:FUJITSU Component Ltd 功能描述:
MB8146112 制造商:FUJITSU 功能描述:*
MB81461-12PSZ 制造商:FUJITSU 功能描述:VRAM, FAST PAGE, 64KX4, 24 Pin, Plastic, ZIP
MB81461B-12 制造商:FUJITSU 功能描述: 制造商:FUGITSU 功能描述:81461B-12 制造商:FUJITSU 功能描述:81461B-12
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