參數(shù)資料
型號(hào): MB81V17805A-70
廠商: Fujitsu Limited
英文描述: CMOS 2M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2M ×8 位超級(jí)頁面存取模式動(dòng)態(tài)RAM)
中文描述: 的CMOS 200萬× 8位超頁模式動(dòng)態(tài)RAM的CMOS(200萬× 8位超級(jí)頁面存取模式動(dòng)態(tài)內(nèi)存)
文件頁數(shù): 24/30頁
文件大小: 604K
代理商: MB81V17805A-70
24
MB81V17805A-60/-60L/-70/-70L
t
RC
t
RP
t
ASR
t
RPC
t
RAH
t
CRP
t
RAS
t
OFF
t
CRP
t
OH
Fig. 16 – RAS-ONLY REFRESH (WE = OE = “H” or “L”)
Fig. 17 – CAS-BEFORE-RAS REFRESH (ADDRESSES = WE = OE = “H” or “L”)
ROW ADDRESS
DESCRIPTION
Refresh of RAM memory cells is accomplished by performing a read, a write, or a read-modify-write cycle at each of 2048 row
addresses every 32.8-milliseconds. Three refresh modes are available: RAS-only refresh, CAS-before-RAS refresh, and hidden
refresh.
RAS-only refresh is performed by keeping RAS Low and CAS High throughout the cycle; the row address to be refreshed is
latched on the falling edge of RAS. During RAS-only refresh, DQ pins are kept in a high-impedance state.
DESCRIPTION
CAS-before-RAS refresh is an on-chip refresh capability that eliminates the need for external refresh addresses. If CAS is held Low
for the specified setup time (t
CSR
) before RAS goes Low, the on-chip refresh control clock generators and refresh address counter
are enabled. An internal refresh operation automatically occurs and the refresh address counter is internally incremented in prep-
aration for the next CAS-before-RAS refresh operation.
HIGH-Z
RAS
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
CAS
DQ
(Output)
A
0
to A
10
t
RC
t
RAS
t
RPC
t
CPN
t
CSR
t
CHR
t
RP
t
OFF
t
OH
t
CSR
t
CPN
RAS
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
CAS
DQ
(Output)
HIGH-Z
“H” or “L” level (excluding Address and DQ)
“H” or “L” level, “H”
“L” or “L”
“H” transition (Address and DQ)
相關(guān)PDF資料
PDF描述
MB81V17805A-70L CMOS 2M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2M ×8 位超級(jí)頁面存取模式動(dòng)態(tài)RAM)
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