參數(shù)資料
型號(hào)： MB81V17805B-60
廠商： Fujitsu Limited
英文描述： 2M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2M ×8位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述： 200萬(wàn)× 8位超頁(yè)模式動(dòng)態(tài)RAM的CMOS（200萬(wàn)× 8位超級(jí)頁(yè)面存取模式動(dòng)態(tài)內(nèi)存）
文件頁(yè)數(shù)： 1/29頁(yè)
文件大小： 557K
代理商： MB81V17805B-60
DS05-11306-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS
2 M
HYPER PAGE MODE DYNAMIC RAM
×
8 BITS
MB81V17805B-50/-60
CMOS 2,097,152
×
8 BITS Hyper Page Mode Dynamic RAM
I
DESCRIPTION
The Fujitsu MB81V17805B is a fully decoded CMOS Dynamic RAM (DRAM) that contains 16,777,216 memory
cells accessible in 8-bit increments. The MB81V17805B features a “hyper page” mode of operation whereby
high-speed random access of up to 1024
×
8-bits of data within the same row can be selected. The MB81V17805B
DRAM is ideally suited for mainframe, buffers, hand-held computers video imaging equipment, and other memory
applications where very low power dissipation and high bandwidth are basic requirements of the design. Since
the standby current of the MB81V17805B is very small, the device can be used as a non-volatile memory in
equipment that uses batteries for primary and/or auxiliary power.
The MB81V17805B is fabricated using silicon gate CMOS and Fujitsu’s advanced four-layer polysilicon and two-
layer aluminum process. This process, coupled with advanced stacked capacitor memory cells, reduces the
possibility of soft errors and extends the time interval between memory refreshes. Clock timing requirements for
the MB81V17805B are not critical and all inputs are LVTTL compatible.
I
PRODUCT LINE & FEATURES
Parameter
MB81V17805B-50
50 ns max.
84 ns min.
25 ns max.
13 ns max.
20 ns min.
468 mW max.
3.6 mW max. (LVTTL level) / 1.8 mW max. (CMOS level)
MB81V17805B-60
60 ns max.
104 ns min.
30 ns max.
15 ns max.
25 ns min.
396 mW max.
RAS Access Time
Random Cycle Time
Address Access Time
CAS Access Time
Hyper Page Mode Cycle Time
Low Power
Dissipation
Operating Current
Standby Current
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
2,097,152 words
×
8 bits organization
Silicon gate, CMOS, Advanced Capacitor Cell
All input and output are LVTTL compatible
2,048 refresh cycles every 32.8 ms
Early write or OE controlled write capability
RAS-only, CAS-before-RAS, or Hidden Refresh
Hyper Page Mode, Read-Modify-Write
capability
On chip substrate bias generator for high
performance
相關(guān)PDF資料
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