參數(shù)資料
型號: MB81V18165A-70
廠商: Fujitsu Limited
英文描述: CMOS 1M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×16位超級頁面存取模式動態(tài)RAM)
中文描述: 的CMOS 100萬× 16位的超頁模式動態(tài)RAM的CMOS(100萬× 16位超級頁面存取模式動態(tài)內(nèi)存)
文件頁數(shù): 8/30頁
文件大?。?/td> 681K
代理商: MB81V18165A-70
8
MB81V18165A-60/60L/-70/70L
I
AC CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.) Notes 3, 4, 5
(Continued)
No.
Parameter
Notes
Symbol
MB81V18165A-60/60L
Min.
104
138
3
5
0
MB81V18165A-70/70L
Min.
124
162
3
5
0
Unit
Max.
16.4
128
60
15
30
Max.
16.4
128
70
17
35
1
Time Between Refresh
Standard
Low power
t
REF
ms
2
3
4
5
6
7
8
9
Random Read/Write Cycle Time
Read-Modify-Write Cycle Time
Access Time from RAS
Access Time from CAS
Column Address Access Time
Output Hold Time
Output Hold Time from CAS
Output Buffer Turn On Delay Time
Output Buffer Turn Off Delay
Time
Output Buffer Turn Off Delay
Time from RAS
Output Buffer Turn Off Delay
Time from WE
Transition Time
RAS Precharge Time
RAS Pulse Width
RAS Hold Time
CAS to RAS Precharge Time
RAS to CAS Delay Time
CAS Pulse Width
CAS Hold Time
CAS Precharge Time (Normal)
Row Address Set Up Time
Row Address Hold Time
Column Address Set Up Time
Column Address Hold Time
Column Address Hold Time from RAS
RAS to Column Address Delay
Time
Column Address to RAS Lead Time
Column Address to CAS Lead Time
Read Command Set Up Time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
OH
t
OHC
t
ON
ns
ns
ns
ns
ns
ns
ns
ns
*6,9
*7,9
*8,9
10
*10
t
OFF
15
17
ns
11
*10
t
OFR
15
17
ns
12
*10
t
WEZ
15
17
ns
13
14
15
16
17
18
19
20
21
22
23
24
25
26
t
T
t
RP
t
RAS
t
RSH
t
CRP
t
RCD
t
CAS
t
CSH
t
CPN
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
1
40
60
15
5
14
10
40
10
0
10
0
10
24
50
1
50
70
17
5
14
13
50
10
0
10
0
10
24
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
100000
45
100000
53
*21
*11,12,22
*19
27
*13
t
RAD
12
30
12
35
ns
28
29
30
t
RAL
t
CAL
t
RCS
30
23
0
35
28
0
ns
ns
ns
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MB81V18165A-70L CMOS 1M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×16位超級頁面存取模式動態(tài)RAM)
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