參數(shù)資料
型號: MB81V18165B-50
廠商: Fujitsu Limited
英文描述: 1 M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超級頁面存取模式動態(tài)RAM)
中文描述: 1米× 16位的超頁模式動態(tài)RAM的CMOS(1米× 16位超級頁面存取模式動態(tài)內(nèi)存)
文件頁數(shù): 9/29頁
文件大?。?/td> 583K
代理商: MB81V18165B-50
9
MB81V18165B-50/-60
(Continued)
No.
Parameter
Notes
Symbol
MB81V18165B-50
Min.
MB81V18165B-60
Min.
Unit
Max.
Max.
32
Read Command Hold Time
Referenced to CAS
Write Command Set Up Time
Write Command Hold Time
Write Hold Time from RAS
WE Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
DIN Set Up Time
DIN Hold Time
Data Hold Time from RAS
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
RAS Precharge Time to CAS Active
Time (Refresh Cycles)
CAS Set Up Time for CAS-before-
RAS Refresh
CAS Hold Time for CAS-before-RAS
Refresh
Access Time from OE
Output Buffer Turn Off Delay from
OE
OE to RAS Lead Time for Valid Data
OE to CAS Lead Time
OE Hold Time Referenced to WE
OE to Data In Delay Time
RAS to Data In Delay Time
CAS to Data In Delay Time
DIN to CAS Delay Time
DIN to OE Delay Time
OE Precharge Time
OE Hold Time Referenced to CAS
WE Precharge Time
WE to Data In Delay Time
Hyper Page Mode RAS Pulse Width
*14
t
RCH
0
0
ns
33
34
35
36
37
38
39
40
41
42
43
44
*15,20
t
WCS
t
WCH
t
WCR
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
DHR
t
RWD
t
CWD
t
AWD
0
7
0
10
24
10
15
10
0
10
24
77
32
47
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
18
7
13
7
0
7
18
65
28
40
*20
*20
*20
45
t
RPC
5
5
ns
46
t
CSR
0
0
ns
47
t
CHR
10
10
ns
48
*9
t
OEA
13
15
ns
49
*10
t
OEZ
13
15
ns
50
51
52
53
54
55
56
57
58
59
60
61
62
t
OEL
t
COL
t
OEH
t
OED
t
RDD
t
CDD
t
DZC
t
DZO
t
OEP
t
OECH
t
WPZ
t
WED
t
RASP
5
5
5
5
5
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*16
13
13
13
0
0
5
7
5
13
15
15
15
0
0
5
10
5
15
*17
*17
100000
100000
相關(guān)PDF資料
PDF描述
MB81V18165B-60 1 M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超級頁面存取模式動態(tài)RAM)
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