參數(shù)資料
型號(hào)： MB81V4800S-60
廠商： Fujitsu Limited
英文描述： CMOS 512K×8 BIT Fast Page Mode DRAM(CMOS 512K×8位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述： 的CMOS為512k × 8位快速頁(yè)面模式的DRAM（的CMOS為512k × 8位快速頁(yè)面存取模式動(dòng)態(tài)內(nèi)存）
文件頁(yè)數(shù)： 1/26頁(yè)
文件大?。?/td> 328K
代理商： MB81V4800S-60
1
DS05-10151-4E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 512K
FAST PAGE MODE DYNAMIC RAM
×
8 BIT
MB81V4800S-60/-70
CMOS 524,288
×
8 bit Fast Page Mode Dynamic RAM
I
DESCRIPTION
The Fujitsu MB81V4800S is a fully decoded CMOS Dynamic RAM (DRAM) that contains 4,194,304 memory
cells accessible in 8-bit increments. The MB81V4800S features a “fast page” mode of operation whereby high-
speed access of up to 512
×
8-bits of data can be selected in the same row. The MB81V4800S-60/-70 DRAMs
are ideally suited for memory applications such as embedded control, buffer, portable computers, and video
imaging equipment where very low power dissipation and high bandwidth are basic requirements of the design.
The MB81V4800S is fabricated using silicon gate CMOS and Fujitsu’s advanced four-layer polysilicon process.
This process, coupled with three-dimensional stacked capacitor memory cells, reduces the possibility of soft
errors and extends the time interval between memory refreshes.
I
ABSOLUTE MAXIMUM RATINGS (See NOTE)
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
Value
Unit
Voltage at any pin relative to V
SS
V
IN
, V
OUT
–0.5 to +4.6
V
Voltage of V
CC
supply relative to V
SS
V
CC
–0.5 to +4.6
V
Power Dissipation
P
D
1.0
W
Short Circuit Output Current
I
OUT
50
mA
°
C
Storage Temperature
T
STG
–55 to +125
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
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