參數(shù)資料
型號(hào): MBM29DL640E12PBT
廠商: FUJITSU LTD
元件分類(lèi): DRAM
英文描述: 64 M (8 M X 8/4 M X 16) BIT Dual Operation
中文描述: 4M X 16 FLASH 3V PROM, 120 ns, PBGA63
封裝: PLASTIC, FBGA-63
文件頁(yè)數(shù): 40/71頁(yè)
文件大小: 913K
代理商: MBM29DL640E12PBT
MBM29DL640E
80/90/12
40
I
ELECTRICAL CHARACTERISTICS
1.
DC Characteristics
*1:The I
CC
current listed includes both the DC operating current and the frequency dependent component.
*2:I
CC
active while Embedded Algorithm (program or erase) is in progress.
*3:Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
*4:Applicable for only V
CC
.
*5:Embedded Algorithm (program or erase) is in progress. (@5 MHz)
Parameter
Symbol
Conditions
Value
Typ.
Unit
Min.
1.0
1.0
Max.
+
1.0
+
1.0
Input Leakage Current
Output Leakage Current
A
9
, OE, RESET Inputs Leakage
Current
WP/ACC Accelerated Program
Current
I
LI
I
LO
V
IN
=
V
SS
to V
CC
, V
CC
=
V
CC
Max.
V
OUT
=
V
SS
to V
CC
, V
CC
=
V
CC
Max.
V
CC
=
V
CC
Max.,
A
9
, OE, RESET
=
12.5 V
V
CC
=
V
CC
Max.
WP/ACC
=
V
ACC
Max.
CE
=
V
IL
, OE
=
V
IH
,
f
=
5 MHz
CE
=
V
IL
, OE
=
V
IH
,
f
=
1 MHz
CE
=
V
IL
, OE
=
V
IH
V
CC
=
V
CC
Max., CE
=
V
CC
±
0.3 V,
RESET
=
V
CC
±
0.3 V
WP/ACC
=
V
CC
±
0.3 V
V
CC
=
V
CC
Max.,
RESET
=
V
SS
±
0.3 V
V
CC
=
V
CC
Max., CE
=
V
SS
±
0.3 V,
RESET
=
V
CC
±
0.3 V
V
IN
=
V
CC
±
0.3 V or V
SS
±
0.3 V
μ
A
μ
A
I
LIT
+
35
μ
A
I
LIA
20
mA
V
CC
Active Current *
1
I
CC1
Byte
Word
Byte
Word
16
18
7
7
40
mA
mA
V
CC
Active Current *
2
I
CC2
mA
V
CC
Current (Standby)
I
CC3
1
5
μ
A
V
CC
Current (Standby, Reset)
I
CC4
1
5
μ
A
V
CC
Current
(Automatic Sleep Mode) *
3
I
CC5
1
5
μ
A
V
CC
Active Current *
5
(Read-While-Program)
I
CC6
CE
=
V
IL
, OE
=
V
IH
Byte
Word
Byte
Word
56
58
56
58
mA
V
CC
Active Current *
5
(Read-While-Erase)
V
CC
Active Current
(Erase-Suspend-Program)
Input Low Level
Input High Level
Voltage for Autoselect and Sector
Protection (A
9
, OE, RESET) *
4
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration *
4
Output Low Voltage Level
I
CC7
CE
=
V
IL
, OE
=
V
IH
mA
I
CC8
CE
=
V
IL
, OE
=
V
IH
40
mA
V
IL
V
IH
0.5
2.0
0.6
V
V
V
CC
+
0.3
V
ID
11.5
12
12.5
V
V
ACC
8.5
9.0
9.5
V
V
OL
V
OH1
V
OH2
V
LKO
I
OL
=
100
μ
A, V
CC
=
V
CC
Min.
I
OH
=
2.0 mA, V
CC
=
V
CC
Min.
I
OH
=
100
μ
A
2.4
2.4
0.45
2.5
V
V
V
V
Output High Voltage Level
V
CC
0.4
2.3
Low V
CC
Lock-Out Voltage
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