參數(shù)資料
型號: MBM29DL640E12PBT
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 64 M (8 M X 8/4 M X 16) BIT Dual Operation
中文描述: 4M X 16 FLASH 3V PROM, 120 ns, PBGA63
封裝: PLASTIC, FBGA-63
文件頁數(shù): 9/71頁
文件大?。?/td> 913K
代理商: MBM29DL640E12PBT
MBM29DL640E
80/90/12
9
I
DEVICE BUS OPERATION
Table 2
MBM29DL640E User Bus Operations (BYTE
=
V
IH
)
Legend : L
=
V
IL
, H
=
V
IH
, X
=
V
IL
or V
IH
,
*1:Manufacturer and device codes may also be accessed via a command register write sequence. SeeTable 4.
=
Pulse input. See DC Characteristics for voltage levels.
*2:Refer to section on Sector Group Protection.
*3:WE can be V
IL
if OE is V
IL
, OE at V
IH
initiates the write operations.
*4:V
CC
=
3.3 V
±
10
%
*5:It is also used for the extended sector group protection.
*6:Protect “outermost” 2
×
8 Kbytes (4 Kwords) on both ends of the boot block sectors.
(Continued)
Operation
CE
OE WE
A
0
A
1
A
2
A
3
A
6
A
9
DQ
15
to
DQ
0
RESET
WP/
ACC
Auto-Select Manufacturer
Code *
1
L
L
H
L
L
L
L
L
V
ID
Code
H
X
Auto-Select Device Code *
1
L
L
H
H
L
L
L
L
V
ID
Code
H
X
Extended Auto-Select Device
Code *
1
L
L
H
L
H
H
H
L
V
ID
Code
H
X
L
L
H
H
H
H
H
L
V
ID
Code
H
X
Read *
3
L
L
H
A
0
A
1
A
2
A
3
A
6
A
9
D
OUT
H
X
Standby
H
X
X
X
X
X
X
X
X
High-Z
H
X
Output Disable
L
H
H
X
X
X
X
X
X
High-Z
H
X
Write (Program/Erase)
L
H
L
A
0
A
1
A
2
A
3
A
6
A
9
D
IN
H
X
Enable Sector Group
Protection *
2,
*
4
L
V
ID
L
H
L
L
L
V
ID
X
H
X
Verify Sector Group Protection
*
2,
*
4
L
L
H
L
H
L
L
L
V
ID
Code
H
X
Temporary Sector Group
Unprotection *
5
X
X
X
X
X
X
X
X
X
X
V
ID
X
Reset (Hardware) /Standby
X
X
X
X
X
X
X
X
X
High-Z
L
X
Boot Block Sector Write
Protection *
6
X
X
X
X
X
X
X
X
X
X
X
L
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