參數(shù)資料
型號(hào)： MBM29DL64DF
廠商： Fujitsu Limited
英文描述： FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
中文描述： 閃存的CMOS 64米（8的MX 8 / 4的MX 16）位
文件頁數(shù)： 12/68頁
文件大?。?/td> 854K
代理商： MBM29DL64DF
MBM29DL64DF
-70
12
MBM29DL64DF Sector Group Protection Verify Autoselect Codes Table
*1 : A
-1
is for Byte mode. At Byte mode, DQ
14
to DQ
8
are High-Z and DQ
15
is A
-1
, the lowest address.
*2 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.
*3 : When V
ID
is applied to A
9
, both Bank 1 and Bank 2 are put into Autoselect mode, which makes simultaneous
operation unable to be executed. Consequently, specifying the bank address is not required. However, the bank
address needs to be indicated when Autoselect mode is read out at command mode, because then it enables
to activate simultaneous operation.
*4 : At Word mode, a read cycle at address (BA) 01h (at Byte mode, (BA) 02h) outputs device code. When 227Eh
(at Byte mode, 7Eh) is output, it indicates that two additional codes, called Extended Device Codes, will be
required. Therefore the system may continue reading out these Extended Device Codes at the address of (BA)
0Eh (at Byte mode, (BA) 1Ch) , as well as at (BA) 0Fh (at Byte mode, (BA) 1Eh) .
Extended Autoselect Code Table
(B) : Byte mode
(W) : Word mode
HZ : High-Z
* : At Byte mode, DQ
14
to DQ
8
are High-Z and DQ
15
is A
-1
, the lowest address.
Type
A
21
to A
12
A
6
A
3
A
2
A
1
A
0
A
-1
*
1
V
IL
X
V
IL
X
V
IL
X
V
IL
X
V
IL
X
Code (HEX)
04h
0004h
7Eh
227Eh
02h
2202h
01h
2201h
01h*
2
0001h*
2
Manufacture’s
Code
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte Sector Group
Addresses
Word
BA*
3
V
IL
V
IL
V
IL
V
IL
V
IL
Device Code
BA*
3
V
IL
V
IL
V
IL
V
IL
V
IH
Extended Device
Code*
4
BA*
3
V
IL
V
IH
V
IH
V
IH
V
IL
BA*
3
V
IL
V
IH
V
IH
V
IH
V
IH
Sector Group
Protection
V
IL
V
IL
V
IL
V
IH
V
IL
Type
Code
DQ
15
DQ
14
DQ
13
DQ
12
DQ
11
DQ
10
DQ
9
DQ
8
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
DQ
2
DQ
1
DQ
0
04h
A
-1
HZ
HZ
HZ
HZ
HZ
HZ
(W) 0004h
0
0
0
0
0
0
(B)*
7Eh
A
-1
HZ
HZ
HZ
HZ
HZ
HZ
(W) 227Eh
0
0
1
0
0
0
(B)*
02h
A
-1
HZ
HZ
HZ
HZ
HZ
HZ
(W) 2202h
0
0
1
0
0
0
(B)*
01h
A
-1
HZ
HZ
HZ
HZ
HZ
HZ
(W) 2201h
0
0
1
0
0
0
(B)*
01h
A
-1
HZ
HZ
HZ
HZ
HZ
HZ
Manufactur-
er’s Code
(B)*
HZ
0
HZ
0
HZ
0
HZ
0
HZ
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
1
1
0
0
0
0
0
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
0
0
0
0
0
1
1
1
0
Device
Code
1
Extended
Device
Code
1
1
Sector
Group
Protection
(W) 0001h
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
相關(guān)PDF資料
PDF描述
MBM29DL64DF-70 FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
MBM29DL64DF70PBT FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
MBM29DL64DF70TN FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
MBM29DL800TA 8M (1M X 8/512K X 16) BIT
MBM29DL800BA-70 LED Lamp; Bulb Size:T-1 3/4; LED Color:Red; Luminous Intensity:2000ucd; Viewing Angle:16 ; Forward Current:20mA; Forward Voltage:1.9V; Operating Temperature Range:-25 C to +85 C; Color:Red; Leaded Process Compatible:Yes RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29DL64DF-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
MBM29DL64DF70PBT 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
MBM29DL64DF70TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
MBM29DL800BA 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29DL800BA-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
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