參數(shù)資料
型號： MBM29F002B
廠商： Fujitsu Limited
英文描述： 2M (256K ×8) Bit Flash Memory( 單5V 電源電壓256K ×8位閃速存儲器)
中文描述： 200萬（256K × 8）位快閃記憶體（單5V的電源電壓256K × 8位閃速存儲器）
文件頁數(shù)： 1/52頁
文件大?。?/td> 591K
代理商： MBM29F002B
DS05-20818-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
2M (256K
×
8) BIT
MBM29F002T/002B/002ST/002SB
-70/-90/-12
I
FEATURES
Single 5.0 V read, write, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
Package option
32-pin TSOP (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type) ··· MBM29F002T/002B
32-pin PLCC (Package suffix: PD) ··· MBM29F002T/002B
40-pin TSOP (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) ··· MBM29F002ST/002SB
Minimum 100,000 write/erase cycles
High performance
70 ns maximum access time
Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T=Top sector
B=Bottom sector
Embedded Erase
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
Algorithms
Automatically write and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Low Vcc write inhibit
≤
3.2 V
Hardware RESET pin
Resets internal state machine to the read mode
Sector protection
Hardware method disables any combination of sectors from write or erase operations
Temporary sector unprotection
Hardware method temporarily enables any combination of sectors from write or erase operations
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
2
PROMs
TM
TM
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關PDF資料
PDF描述
MBM29F002SB 2M (256K ×8) Bit Flash Memory( 單5V 電源電壓256K ×8位閃速存儲器)
MBM29F002ST 2M (256K ×8) Bit Flash Memory( 單5V 電源電壓256K ×8位閃速存儲器)
MBM29F002T 2M (256K ×8) Bit Flash Memory( 單5V 電源電壓256K ×8位閃速存儲器)
MBM29F016-12 CMOS 16M (2M x 8) Bit Flash Memory(CMOS 16M (2M x 8)位閃速存儲器)
MBM29F016-90 CMOS 16M (2M x 8) Bit Flash Memory(CMOS 16M (2M x 8)位閃速存儲器)
相關代理商/技術參數(shù)
參數(shù)描述
MBM29F002BC 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8) BIT
MBM29F002BC-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8) BIT
MBM29F002BC-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8) BIT
MBM29F002BC-90 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8) BIT
MBM29F002T-90PD# 制造商:FUJITSU 功能描述:
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