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參數(shù)資料
| 型號(hào)： | MBM29F016A-70PFTR |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 1.65A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-PDIP -40 to 85 |
| 中文描述： | 2M X 8 FLASH 5V PROM, 70 ns, PDSO48 |
| 封裝： | PLASTIC, REVERSE, TSOP1-48 |
| 文件頁(yè)數(shù)： | 35/43頁(yè) |
| 文件大?。?/td> | 458K |
| 代理商： | MBM29F016A-70PFTR |
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35
MBM29F016A
-70/-90/-12
Figure 17 Embedded Erase Algorithm
Note:
To insure the command has been accepted, the system software should check the status
of DQ
3
prior to and following each subsequent sector erase command. If DQ
3
were high on
the second status check, the command may not have been accepted.
Start
555H/AAH
2AAH/55H
555H/AAH
555H/80H
555H/10H
2AAH/55H
555H/AAH
2AAH/55H
555H/AAH
555H/80H
2AAH/55H
Additional sector
erase commands
are optional.
Write Erase Command
Sequece
(See Below)
Data Polling or Toggle Bit I
Successfully Completed
Erasure Completed
Chip Erase Command Sequence
(Address/Command):
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command):
Sector Address/30H
Sector Address/30H
Sector Address/30H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F016A-90PFTN | 16M (2M X 8) BIT |
| MBM29F016A-90PFTR | 2.2A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85 |
| MBM29F016A-70 | 16M (2M X 8) BIT |
| MBM29F016A-90 | 16M (2M X 8) BIT |
| MBM29F016 | 16M (2M ×8) Bit Flash Memory( 單5V 電源電壓2M ×8位閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F016A-90 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT |
| MBM29F016A-90PFTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT |
| MBM29F016A-90PFTR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT |
| MBM29F017A | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT |
| MBM29F017A-12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT |
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