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參數(shù)資料
| 型號： | MBM29F016 |
| 廠商： | Fujitsu Limited |
| 英文描述： | 16M (2M ×8) Bit Flash Memory( 單5V 電源電壓2M ×8位閃速存儲器) |
| 中文描述： | 1,600（2米× 8）位快閃記憶體（單5V的電源電壓200萬× 8位閃速存儲器） |
| 文件頁數(shù)： | 1/18頁 |
| 文件大?。?/td> | 216K |
| 代理商： | MBM29F016 |
Embedded Erase, Embedded Program and ExpressFlash are trademarks of Advanced Micro Devices, Inc.
DS05-20820-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M
×
8) BIT
MBM29F016
-12-X
I
FEATURES
Single 5.0 V read, program, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
Compatible with JEDEC-standard pinouts
48-pin TSOP (Package suffix: PFTN–Normal Bend Type, PFTR–Reversed Bend Type)
Minimum 100,000 write/erase cycles
High performance
120 ns maximum access time
Sector erase architecture
Uniform sectors of 64K bytes each
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Embedded Erase
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
Algorithms
Automatically programs and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/BUSY output (RY/BY)
Hardware method for detection of program or erase cycle completion
Low V
CC
write inhibit
≤
3.2 V
Hardware RESET pin
Resets internal state machine to the read mode
Erase Suspend/Resume
Supports reading or programming data to a sector not being erased
Sector group protection
Hardware method that disables any combination of sector groups from write or erase operation (a sector group
consists of 4 adjacent sectors of 64K bytes each)
Temporary sector group unprotection
Hardware method enables temporarily any combination of sectors from write or erase operations
Extended Operating temperature range: –40
°
C to +85
TM
TM
°
C
Please refer to “MBM29F016-90/-12” in detailed specifications.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F017-12 | 16M (2M ×8) Bit Flash Memory( 單5V 電源電壓2M ×8閃速存儲器) |
| MBM29F017-90 | 16M (2M ×8) Bit Flash Memory( 單5V 電源電壓2M ×8閃速存儲器) |
| MBM29F017A | 2.2A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85 |
| MBM29F017A-70PFTN | 16M (2M X 8) BIT |
| MBM29F017A-70PFTR | 16M (2M X 8) BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F016A | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT |
| MBM29F016A-12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT |
| MBM29F016A-12PFTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT |
| MBM29F016A-12PFTN-X# | 制造商:FUJITSU 功能描述: |
| MBM29F016A-12PFTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT |
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