參數(shù)資料
型號(hào)： MBM29F033C-12PTN
廠商： FUJITSU LTD
元件分類： DRAM
英文描述： 32M (4M X 8) BIT
中文描述： 4M X 8 FLASH 5V PROM, 120 ns, PDSO40
封裝： PLASTIC, TSOP1-40
文件頁數(shù)： 1/46頁
文件大?。?/td> 478K
代理商： MBM29F033C-12PTN
Embedded Erase, Embedded Program and ExpressFlash are trademarks of Advanced Micro Devices, Inc.
DS05-20869-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
32M (4M
×
8) BIT
MBM29F033C
-70/-90/-12
I
FEATURES
Single 5.0 V read, write, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
Minimum 100,000 write/erase cycles
High performance
70 ns maximum access time
Sector erase architecture
Uniform sectors of 64K bytes each
Any combination of sectors can be erased. Also supports full chip erase
Embedded Erase
TM
Algorithms
Automatically preprograms and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically programs and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/BUSY output (RY/BY)
Hardware method for detection of program or erase cycle completion
Low V
CC
write inhibit
≤
3.2 V
Hardware RESET pin
Resets internal state machine to the read mode
Erase Suspend/Resume
Supports reading or programming data to a sector not being erased
Sector group protection
Hardware method that disables any combination of sector groups from write or erase operation (a sector group
consists of 4 adjacent sectors of 64K bytes each)
Temporary sector groups unprotection
Hardware method temporarily enable any combination of sectors from write or erase operations
相關(guān)PDF資料
PDF描述
MBM29F040A-12 Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
MBM29F040A-12-X FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040A-90-X FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040A-70 4M (512K ×8) BIT Flash Memoery(512K ×8位 5V 電源電壓閃速存儲(chǔ)器)
MBM29F040A-90 4M (512K ×8) BIT Flash Memoery(512K ×8位 5V 電源電壓閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F033C-12PTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M X 8) BIT
MBM29F033C-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M X 8) BIT
MBM29F033C-70PTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M X 8) BIT
MBM29F033C-70PTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M X 8) BIT
MBM29F033C-90 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:32M (4M X 8) BIT
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