參數(shù)資料
型號(hào): MBM29F033C-12PTN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 32M (4M X 8) BIT
中文描述: 4M X 8 FLASH 5V PROM, 120 ns, PDSO40
封裝: PLASTIC, TSOP1-40
文件頁數(shù): 26/46頁
文件大?。?/td> 478K
代理商: MBM29F033C-12PTN
26
MBM29F033C
-70/-90/-12
I
AC CHARACTERISTICS
Read Only Operations Characteristics
Parameter
Symbols
Description
Test Setup
-70
(Note1)
-90
(Note2)
-12
(Note2)
Unit
JEDEC Standard
t
AVAV
t
RC
Read Cycle Time
Min.
70
90
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE = V
IL
OE = V
IL
Max.
70
90
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE = V
IL
Max.
70
90
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max.
40
40
50
ns
t
EHQZ
t
DF
Chip Enable to Output High-Z
Max.
20
20
30
ns
t
GHQZ
t
DF
Output Enable to Output High-Z
Max.
20
20
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
Min.
0
0
0
ns
t
READY
RESET Pin Low to Read Mode
Max.
20
20
20
μs
Note1:
Test Conditions:
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
Input: 1.5 V
Output: 1.5 V
Note2:
Test Conditions:
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level
Input: 0.8 V and 2.0 V
Output: 0.8 V and 2.0 V
Figure 4 Test Conditions
Note 1:
CL = 30 pF including jig capacitance
2:
CL = 100 pF including jig capacitance
C
L
5.0 V
Diodes = IN3064
or Equivalent
2.7 k
Device
Under
Test
IN3064
or Equivalent
6.2 k
相關(guān)PDF資料
PDF描述
MBM29F040A-12 Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
MBM29F040A-12-X FLASH MEMORY CMOS 4M 512K X 8 BIT
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