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參數(shù)資料
| 型號： | MBM29F040A-70 |
| 廠商： | Fujitsu Limited |
| 英文描述： | 4M (512K ×8) BIT Flash Memoery(512K ×8位 5V 電源電壓閃速存儲器) |
| 中文描述： | 4分（為512k × 8）位閃存Memoery（為512k × 8位5V的電源電壓閃速存儲器） |
| 文件頁數(shù)： | 11/42頁 |
| 文件大?。?/td> | 492K |
| 代理商： | MBM29F040A-70 |
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11
MBM29F040A
-70/-90/-12
It is also possible to determine if a sector is protected in the system by writing an Autoselect command. Performing
a read operation at the address location XX02H, where the higher order addresses (A
16
, A
17
and A
18
) are the
sector address will produce a logical “1” at DQ
0
for a protected sector. See Table 3 for Autoselect codes.
Notes: 1.Address bits A
15
, A
16
, A
17
and A
18
= X = Don’t Care for all address commands except for Program Address
(PA) and Sector Address (SA).
2.Bus operations are defined in Table 2.
3.RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the
WE pulse.
SA = Address of the sector to be erased. The combination of A
18
, A
17
, and A
16
will uniquely select any
sector.
4.RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the falling edge of WE.
*: Either of the two reset commands will reset the device.
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the device to read
mode. Table 5 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase
Resume (30H) commands are valid only while the Sector Erase operation is in progress.
Table 5 MBM29F040A Command Definitions
Command
Sequence
Read/Reset
Bus
Write
Cycles
Req'd
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read/Reset*
1
XXXX
H F0H
—
—
—
—
—
—
—
—
—
—
Read/Reset*
4
5555H AAH 2AAAH 55H 5555H F0H
RA
RD
—
—
—
—
Autoselect
3
5555H AAH 2AAAH 55H 5555H 90H
—
—
—
—
—
—
Byte Program
4
5555H AAH 2AAAH 55H 5555H A0H
PA
PD
—
—
—
—
Chip Erase
6
5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H
Sector Erase
6
5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H
SA
30H
Sector Erase Suspend
Erase can be suspended during sector erase with Addr (H or L). Data (B0H)
Sector Erase Resume
Erase can be resumed after suspend with Addr (H or L). Data (30H)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F040A-90 | 4M (512K ×8) BIT Flash Memoery(512K ×8位 5V 電源電壓閃速存儲器) |
| MBM29F040A | 4M (512K ×8) Bit Flash Memory( 單5V 電源電壓512K ×8位閃速存儲器) |
| MBM29F040C | 4M (512K X 8) BIT |
| MBM29F040C-55 | Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85 |
| MBM29F040C-55PD | 4M (512K X 8) BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F040A-90-X | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT |
| MBM29F040C | 制造商:FUJRTSU 功能描述: |
| MBM29F040C-55 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT |
| MBM29F040C-55PD | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT |
| MBM29F040C-55PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY 4M (512K x 8) BIT |
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