參數(shù)資料
型號(hào): MBM29F040A-70
廠商: Fujitsu Limited
英文描述: 4M (512K ×8) BIT Flash Memoery(512K ×8位 5V 電源電壓閃速存儲(chǔ)器)
中文描述: 4分(為512k × 8)位閃存Memoery(為512k × 8位5V的電源電壓閃速存儲(chǔ)器)
文件頁(yè)數(shù): 7/42頁(yè)
文件大?。?/td> 492K
代理商: MBM29F040A-70
7
MBM29F040A
-70/-90/-12
I
LOGIC SYMBOL
Legend: L = V
IL
, H = V
IH
, X = V
IL
or V
IH
,
= Pulse Input. See DC Characteristics for voltage levels.
Notes: 1.Manufacturer and device codes may also be accessed via a command register write sequence. Refer to
Tables 5.
2.Refer to the section on Sector Protection.
3.WE can be V
IL
if OE is V
IL
, OE at V
IH
initiates the write operations.
Table 1 MBM29F040A Pin Configuration
Pin
Function
A
0
to A
18
Address Inputs
DQ
0
to DQ
7
Data Inputs/Outputs
CE
Chip Enable
OE
Output Enable
WE
Write Enable
V
SS
Device Ground
V
CC
Device Power Supply
(5.0 V
±
10%)
Table 2 MBM29F040A User Bus Operations
Operation
CE
OE
WE
A
0
A
1
A
6
A
9
I/O
Auto-Select Manufacturer Code (1)
L
L
H
L
L
L
V
ID
Code
Auto-Select Device Code (1)
L
L
H
H
L
L
V
ID
Code
Read (3)
L
L
H
A
0
A
1
A
6
A
9
D
OUT
Standby
H
X
X
X
X
X
X
HIGH-Z
Output Disable
L
H
H
X
X
X
X
HIGH-Z
Write (Program/Erase)
L
H
L
A
0
A
1
A
6
A
9
D
IN
Enable Sector Protect (2)
L
V
ID
X
X
X
V
ID
X
Verify Sector Protect (2)
L
L
H
L
H
L
V
ID
Code
19
A
0
to A
18
WE
OE
CE
DQ
0
to DQ
7
8
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參數(shù)描述
MBM29F040A-90-X 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040C 制造商:FUJRTSU 功能描述:
MBM29F040C-55 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-55PD 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-55PFTN 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY 4M (512K x 8) BIT