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參數資料
| 型號： | MBM29F040A |
| 廠商： | Fujitsu Limited |
| 英文描述： | 4M (512K ×8) Bit Flash Memory( 單5V 電源電壓512K ×8位閃速存儲器) |
| 中文描述： | 4分（為512k × 8）位快閃記憶體（單5V的電源電壓為512k × 8位閃速存儲器） |
| 文件頁數： | 13/19頁 |
| 文件大?。?/td> | 286K |
| 代理商： | MBM29F040A |
13
MBM29F040A
-90-X/-12-X
Write/Erase/Program Operations
Alternate WE Controlled Writes
Notes: 1.This does not include the preprogramming time.
2.This timing is for Sector Protection operation.
Parameter Symbols
Description
-90-X
-12-X
Unit
JEDEC
Standard
t
AVAV
t
WC
Write Cycle Time
Min.
90
120
ns
t
AVWL
t
AS
Address Set Up Time
Min.
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min.
45
50
ns
t
DVWH
t
DS
Data Set Up Time
Min.
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min.
0
0
ns
—
t
OES
Output Enable Set Up Time
Min.
0
0
ns
—
t
OEH
Output Enable
Hold Time
Read
Min.
0
0
ns
Toggle and Data Polling
Min.
10
10
ns
t
GHWL
t
GHWL
Read Recover Time Before Write
Min.
0
0
ns
t
ELWL
t
CS
CE Set Up Time
Min.
0
0
ns
t
WHEH
t
CH
CE Hold Time
Min.
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min.
45
50
ns
t
WHWL
t
WPH
Write Pulse Width High
Min.
20
20
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
Typ.
16
16
μ
s
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 1)
Typ.
1.5
1.5
sec
Max.
30
30
sec
—
t
VCS
V
CC
Set Up Time
Min.
50
50
μ
s
—
t
VLHT
Voltage Transition Time (Note 2)
Min.
4
4
μ
s
—
t
WPP
Write Pulse Width (Note 2)
Min.
100
100
μ
s
—
t
OESP
OE Set Up Time to WE Active (Note 2)
Min.
4
4
μ
s
—
t
CSP
CE Set Up Time to WE Active (Note 2)
Min.
4
4
μ
s
相關PDF資料 |
PDF描述 |
|---|---|
| MBM29F040C | 4M (512K X 8) BIT |
| MBM29F040C-55 | Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85 |
| MBM29F040C-55PD | 4M (512K X 8) BIT |
| MBM29F040C-55PFTN | Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85 |
| MBM29F040C-55PFTR | Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MBM29F040A-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT |
| MBM29F040A-12-X | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT |
| MBM29F040A-90-X | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT |
| MBM29F040C | 制造商:FUJRTSU 功能描述: |
| MBM29F040C-55 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT |
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