參數(shù)資料
型號: MBM29F040A
廠商: Fujitsu Limited
英文描述: 4M (512K ×8) Bit Flash Memory( 單5V 電源電壓512K ×8位閃速存儲器)
中文描述: 4分(為512k × 8)位快閃記憶體(單5V的電源電壓為512k × 8位閃速存儲器)
文件頁數(shù): 8/19頁
文件大?。?/td> 286K
代理商: MBM29F040A
8
MBM29F040A
-90-X/-12-X
I
ABSOLUTE MAXIMUM RATINGS
Storage Temperature ........................................................................................–55
Ambient Temperature with Power Applied ........................................................–40
Voltage with Respect to Ground All pins except A
V
CC
(Note 1) ......................................................................................................–2.0 V to +7.0 V
A
9
, OE (Note 2).................................................................................................–2.0 V to +13.5 V
°
°
C to +125
C to +85
°
C
C
°
9
, OE (Note 1) .....................–2.0 V to +7.0 V
Notes: 1.Minimum DC voltage on input or I/O pins are –0.5 V. During voltage transitions, inputs may negative
overshoot V
SS
to –2.0 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins is V
+0.5 V. During voltage transitions, outputs may positive overshoot to V
2.Minimum DC input voltage on A
9
, OE pins are –0.5 V. During voltage transitions, A
negative overshoot V
SS
to –2.0 V for periods of up to 20 ns. Maximum DC input voltage on A
+13.5 V which may overshoot to 14.0 V for periods of up to 20 ns.
CC
CC
+2.0 V for periods of up to 20 ns.
, and OE pins may
9
9
, and OE are
WARNING:
Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
I
RECOMMENDED OPERATING RANGES
Industrial Devices
Ambient Temperature (T
V
CC
Supply Voltages...................................................................................... +4.50 V to +5.50 V
A
)............................................................................. –40
°
C to +85
°
C
Operating ranges define those limits between which the functionality of the device is guaranteed.
WARNING:
Recommended operating conditions are normal operating ranges for the semiconductor device. All
the device’s electrical characteristics are warranted when operated within these ranges.
Always use semiconductor devices within the recommended operating conditions. Operation outside
these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representative beforehand.
相關(guān)PDF資料
PDF描述
MBM29F040C 4M (512K X 8) BIT
MBM29F040C-55 Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85
MBM29F040C-55PD 4M (512K X 8) BIT
MBM29F040C-55PFTN Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
MBM29F040C-55PFTR Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F040A-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040A-12-X 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040A-90-X 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040C 制造商:FUJRTSU 功能描述:
MBM29F040C-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT