參數(shù)資料
型號(hào)： MBM29F080-90
廠商： Fujitsu Limited
英文描述： 8M (1M ×8) BIT Flash Memory(1M ×8 位5V 電源電壓閃速存儲(chǔ)器)
中文描述： 8米（1米× 8）位快閃記憶體（1米× 8位5V的電源電壓閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 12/50頁(yè)
文件大?。?/td> 667K
代理商： MBM29F080-90
12
MBM29F080
-90/-12
Write
Device erasure and programming are accomplished via the command register. The contents of the register
serve as inputs to the internal state machine. The state machine outputs dictate the function of the device.
The command register itself does not occupy any addressable memory location. The register is a latch used to
store the commands, along with the address and data information needed to execute the command. The com-
mand register is written by bringing WE to V
IL
, while CE is at V
IL
and OE is at V
IH
. Addresses are latched on the
falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE,
whichever happens first. Standard microprocessor write timings are used.
Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters.
Sector Group Protection
The MBM29F080 features hardware sector group protection. This feature will disable both program and erase
operations in any combination of eight sector groups of memory. Each sector group consists of two adjacent
sectors grouped in the following pattern: sectors 0-1, 2-3, 4-5, 6-7, 8-9, 10-11, 12-13, and 14-15. (See Table 5.)
The sector group protection feature is enabled using programming equipment at the user's site. The device is
shipped with all sector groups unprotected.
To activate this mode, the programming equipment must force V
ID
on address pin A
9
and control pin OE, (suggest
V
ID
= 11.5 V), CE = V
IL
. The sector addresses (A
19
, A
18
, and A
17
) should be set to the sector to be protected.
Tables 4 and 5 define the sector address for each of the sixteen (16) individual sectors and the sector group
address for each of the eight (8) individual group sectors. Programming of the protection circuitry begins on the
falling edge of the WE pulse and is terminated with the rising edge of the same. Sector addresses must be held
constant during the WE pulse. Refer to figures 14 and 21 for sector protection waveforms and algorithm.
To verify programming of the protection circuitry, the programming equipment must force V
ID
on address pin A
9
with CE and OE at V
IL
and WE at V
IH
. Scanning the sector addresses (A
19
, A
18
, and A
17
) while (A
6
, A
1
, A
0
) = (0,
1, 0) will produce a logical “1” code at device output DQ
0
for a protected sector. Otherwise the device will produce
00H for unprotected sector. In this mode, the lower order addresses, except for A
0
, A
1
, and A
6
are don't care.
Address locations with A
1
= V
IL
are reseved for Autoselect manufacturer and device codes.
It is also possible to determine if a sector group is protected in the system by writing an Autoselect command.
Performing a read operation at the address location XX02H, where the higher order addresses (A
19
, A
18
, and
A
17
) are the desired sector group address will produce a logical “1” at DQ
0
for a protected sector group. See
Table 3 for Autoselect codes.
Temporary Sector Group Unprotection
This feature allows temporary unprotection of previously protected sector groups of the MBM29F080 device in
order to change data. The Sector Group Unprotection mode is activated by setting the RESET pin to high voltage
(12 V). During this mode, formerly protected sector groups can be programmed or erased by selecting the sector
group addresses. Once the 12 V is taken away from the RESET pin, all the previously protected sector groups
will be protected again. Refer to Figures 13 and 20.
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