參數(shù)資料
型號: MBM29F080-90
廠商: Fujitsu Limited
英文描述: 8M (1M ×8) BIT Flash Memory(1M ×8 位5V 電源電壓閃速存儲器)
中文描述: 8米(1米× 8)位快閃記憶體(1米× 8位5V的電源電壓閃速存儲器)
文件頁數(shù): 24/50頁
文件大小: 667K
代理商: MBM29F080-90
24
MBM29F080
-90/-12
CMOS Compatible
Notes: 1.The I
CC
current listed includes both the DC operating current and the frequency dependent component
(at 6 MHz).
The frequency component typically is 2 mA/MHz, with OE at V
IH
.
2.I
CC
active while Embedded Algorithm (program or erase) is in progress.
3.Applicable to sector protection function.
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max.
±
1.0
μ
A
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max.
±
1.0
μ
A
I
LIT
A
9
, OE, RESET Inputs Leakage
Current
V
CC
= V
CC
Max.
A
9
, OE, RESET = 12.0 V
50
μ
A
I
CC1
V
CC
Active Current (Note 1)
CE = V
IL
, OE = V
IH
40
mA
I
CC2
V
CC
Active Current (Note 2)
CE = V
IL
, OE = V
IH
45
mA
I
CC3
V
CC
Standby Current
V
CC
= V
CC
Max., CE = V
CC
±
0.3
V,
RESET = V
CC
±
0.3 V
5
μ
A
I
CC4
V
CC
Standby Current (Reset)
V
CC
= V
CC
Max.
RESET = V
SS
±
0.3 V
5
μ
A
V
IL
Input Low Level
–0.5
0.8
V
V
IH
Input High Level
0.7
×
V
CC
V
CC
+0.3
V
V
ID
Voltage for Autoselect and Sector
Protection
(A
9
, OE, RESET)
(Note 3)
V
CC
= 5.0 V
11.5
12.5
V
V
OL
Output Low Voltage Level
I
OL
= 12.0 mA, V
CC
= V
CC
Min.
0.45
V
V
OH1
Output High Voltage Level
I
OH
= –2.5 mA, V
CC
= V
CC
Min.
0.85
×
V
CC
V
V
OH2
I
OH
= –100
μ
A, V
CC
= V
CC
Min.
V
CC
–0.4
V
V
LKO
Low V
CC
Lock-Out Voltage
3.2
4.2
V
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