參數(shù)資料
型號(hào): MBM29LV002T-10
廠商: Fujitsu Limited
英文描述: 2M (256K ×8) Bit Flash Memory(2M (256K ×8)位 單5V 電源電壓閃速存儲(chǔ)器)
中文描述: 200萬(wàn)(256K × 8)位閃存(200萬(wàn)(256K × 8)位單5V的電源電壓閃速存儲(chǔ)器)
文件頁(yè)數(shù): 22/45頁(yè)
文件大?。?/td> 406K
代理商: MBM29LV002T-10
22
MBM29LV002T
-10/-12
/MBM29LV002B
-10/-12
I
DC CHARACTERISTICS
Notes:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component
(at 5 MHz).
The frequency component typically is 2 mA/MHz, with OE at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max.
–1.0
+1.0
μ
A
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max.
–1.0
+1.0
μ
A
I
LIT
A
9
, OE, RESET Inputs
Leakage Current
V
CC
= V
CC
Max.,
A
9
, OE, RESET = 12.5 V
80
μ
A
I
CC1
V
CC
Active Current (Note 1)
CE = V
IL
, OE = V
IH
30
mA
I
CC2
V
CC
Active Current (Note 2)
CE = V
IL
, OE = V
IH
35
mA
I
CC3
V
CC
Current (Standby)
V
CC
= V
CC
Max., CE = V
CC
±
0.3
V,
RESET = V
CC
±
0.3 V
5
μ
A
I
CC4
V
CC
Current (Standby, Reset)
V
CC
= V
CC
Max.,
RESET = V
SS
±
0.3 V
5
μ
A
V
IL
Input Low Level
–0.5
0.6
V
V
IH
Input High Level
2.0
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect and Sector
Protection/Temporary Sector
Unprotection (A
9
, OE, RESET)
11.5
12.5
V
V
OL
Output Low Voltage Level
I
OL
= 4.0 mA, V
CC
= V
CC
Min.
0.45
V
V
OH1
Output High Voltage Level
I
OH
= –2.0 mA, V
CC
= V
CC
Min.
2.4
V
V
OH2
I
OH
= –100
μ
A, V
CC
= V
CC
Min.
V
CC
– 0.4
V
V
LKO
Low V
CC
Lock-Out Voltage
2.3
2.5
V
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