參數(shù)資料
型號(hào)： MBM29LV652UE
廠商： Fujitsu Limited
英文描述： 64M (4M X 16) BIT
中文描述： 64M號(hào)（4米× 16）位
文件頁(yè)數(shù)： 25/58頁(yè)
文件大小： 571K
代理商： MBM29LV652UE
MBM29LV652UE-
90/12
25
Hidden ROM (Hi-ROM) Region
The Hi-ROM feature provides a Flash memory region that the system may access through a new command
sequence. This is primarily intended for customers who wish to use an Electronic Serial Number (ESN) in the
device with the ESN protected against modification. Once the Hi-ROM region is programmed, any further
modification of that region is impossible. This ensures the security of the ESN once the product is shipped to
the field.
The Hi-ROM region is 128 words in length. After the system has written the Enter Hi-ROM command sequence,
it may read the Hidden ROM region by using device addresses A
0
to A
6
(A
7
to A
14
are “00”, A
15
to A
21
are don’t
care). That is, the device sends only program command that would normally be sent to the address to the Hi-
ROM region. This mode of operation continues until the system issues the Exit Hi-ROM command sequence,
or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to
sending commands to the address.
Hidden ROM (Hi-ROM) Entry Command
MBM29LV652UE has a Hidden ROM area with One Time Protect function. This area is to enter the security
code and to unable the change of the code once set. Program is possible in this area until it is protected. However,
once it is protected, it is impossible to unprotect, so please use this with caution.
Hidden ROM area is 128words in length. Write the Hidden ROM entry command sequence to enter the Hidden
ROM area. It is called as Hidden ROM mode when the Hidden ROM area appears. After the system has written
the Enter Hi-ROM command sequence, it may read the Hidden ROM region by using device addresses A
0
to A
6
(A
7
to A
14
are “00”, A
15
to A
21
are don’t care).
Read/program of the Hidden ROM area is possible during Hidden ROM mode. Write the Hidden ROM reset
command sequence to exit the Hidden ROM mode.
Hidden ROM (Hi-ROM) Program Command
To program the data to the Hidden ROM area, write the Hidden ROM program command sequence during Hidden
ROM mode. This command is same as the program command in the past except to write the command during
Hidden ROM mode. Therefore the detection of completion method is the same as in the past, using the DQ
7
data poling, DQ
6
toggle bit and RY/BY pin.
Hidden ROM (Hi-ROM) Protect Command
There are two methods to protect the Hidden ROM area. One is to write the sector group protect setup
command(60h), set the sector address to select (A
6
, A
1
, A
0
) = (0,1,0) and Hidden ROM area and write the sector
group protect command(60h) during the Hidden ROM mode. Same command sequence could be used because
other then the Hidden ROM mode and that is does not apply high voltage to RESET pin, it is same as the
extension sector group protect in the past. Please refer "Function Explanation
Extended Command
(3)
Extentended Sector Group Protection" for details of extention sector group protect setting.
The other is to apply high voltage (V
ID
) to A9 and OE, specify the sector address to select (A
6
, A
1
, A
0
) = (0,1,0)
and Hidden ROM area, and apply the write pulse during the Hidden ROM mode. To verify the protect circuit,
apply high voltage (V
ID
) to A9, specify (A
6
, A
1
, A
0
) = (0,1,0) and the sector address to select the Hidden ROM
area, and read. When "1" appears to DQ
0
, the protect setting is completed. "0" will appear to DQ
0
if it is not
protected. Please apply write pulse agian. Same command sequence could be used for the above method
because other then the Hidden ROM mode, it is same as the sector group protect in the past. Please refer
"Function Explanation
Secor Group Protection
" for details of sector group protect setting
相關(guān)PDF資料
PDF描述
MBM29LV652UE-12 64M (4M X 16) BIT
MBM29LV652UE-90 64M (4M X 16) BIT
MBM29LV652UE90PBT 64M (4M X 16) BIT
MBM29LV800BA 8M (1M X 8/512K X 16) BIT
MBM29LV800BA-90 LED Lamp; Bulb Size:T-1 3/4; LED Color:Amber; Luminous Intensity:2000ucd; Viewing Angle:20 ; Forward Current:20mA; Forward Voltage:2.1V; Operating Temperature Range:-25 C to +85 C; Color:Amber; Leaded Process Compatible:Yes RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV652UE-12 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT
MBM29LV652UE-90 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT
MBM29LV652UE90PBT 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT
MBM29LV800BA 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29LV800BA-12 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
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