參數(shù)資料
型號(hào): MBM29PDS322TE11PBT
廠商: FUJITSU LTD
元件分類(lèi): DRAM
英文描述: 32M (2M x 16) BIT Page Dual Operation
中文描述: 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63
封裝: PLASTIC, FBGA-63
文件頁(yè)數(shù): 57/66頁(yè)
文件大?。?/td> 694K
代理商: MBM29PDS322TE11PBT
MBM29PDS322TE/BE
10/11
57
Figure 21 Embedded Erase
TM
Algorithm
EMBEDDED ALGORITHM
555h/AAh
555h/80h
2AAh/55h
555h/AAh
555h/10h
2AAh/55h
555h/AAh
555h/80h
2AAh/55h
555h/AAh
Sector Address
/30h
Sector Address
/30h
Sector Address
/30h
2AAh/55h
Erasure Completed
Data
=
FFh
Data Polling
Write Erase
Command Sequence
(See Below)
Start
No
Yes
Embedded
Erase
Algorithm
in progress
Chip Erase Command Sequence
(Address/Command)
:
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command)
:
Additional sector
erase commands
are optional.
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