參數(shù)資料
型號: MBR2535CTLG
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: SWITCHMODE Power Rectifier
中文描述: 12.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 60K
代理商: MBR2535CTLG
MBR2535CTL
http://onsemi.com
2
MAXIMUM RATINGS
(Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T
C
= 142
°
C per Diode)
(T
C
= 142
°
C per Device)
Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, T
C
= 139
°
C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
V
RRM
V
RWM
V
R
I
F(AV)
35
V
12.5
25
25
150
A
I
FRM
I
FSM
A
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
R
)
Controlled Avalanche Energy
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
I
RRM
T
stg
T
J
dv/dt
W
aval
1.0
A
°
C
°
C
V/ s
mJ
65 to +150
65 to +150
10,000
20
THERMAL CHARACTERISTICS
Characteristic
Conditions
Symbol
Max
Unit
Maximum Thermal Resistance, JunctiontoCase
Min. Pad
R
JC
2.0
°
C/W
Maximum Thermal Resistance, JunctiontoAmbient
Min. Pad
R
JA
75.0
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typical
Max
Unit
Instantaneous Forward Voltage (Note 2)
(i
F
= 25 Amps, T
j
= 25
°
C)
(i
F
= 12.5 Amps, Tj = 25
°
C)
(i
F
= 12.5 Amps, Tj = 125
°
C)
v
F
0.51
0.41
0.33
0.55
0.47
0.41
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 25
°
C)
(Rated dc Voltage, Tj = 125
°
C)
i
R
0.8
300
5.0
500
mA
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.
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