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參數(shù)資料
| 型號(hào)： | MC-4516DC72 |
| 廠商： | NEC Corp. |
| 英文描述： | 16 M-Word By 72-Bit Synchronous Dynamic RAM Module(同步動(dòng)態(tài)RAM 模塊) |
| 中文描述： | 16米，由72個(gè)字位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊（同步動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 1/24頁(yè) |
| 文件大?。?/td> | 211K |
| 代理商： | MC-4516DC72 |
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The information in this document is subject to change without notice.
1997
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516DC72
16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
REGISTERED TYPE
Document No. M12351EJ4V0DS00 (4th edition)
Date Published May 1998 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The MC-4516DC72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M
SDRAM :
μ
PD4564841 are assembled.
This module provides high density and large quantities of memory In a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 72 bits organization (ECC type)
Clock frequency and Clock access time
Family
/CAS Latency
Clock frequency
Burst cycle time
Power consumption (MAX.)
(MAX.)
(MIN.)
Active
Standby
MC-4516DC72-A10
CL = 3
100
MHz
10
ns
5.454
W
130
mW
CL = 2
67
MHz
15
ns
5.292
W
(CMOS level input )
MC-4516DC72-A12
CL = 3
83
MHz
12
ns
5.130
W
CL = 2
55
MHz
18
ns
4.968
W
MC-4516DC72-A10B
CL = 3
100
MHz
10
ns
5.616
W
68.4
mW
CL = 2
67
MHz
15
ns
5.292
W
(CMOS level input )
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and Full Page)
Programmable wrap sequence (Sequential
/
Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single +3.3 V +0.3
/
–0.15
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
200-pin dual in-line memory module (Pin pitch = 1.27
mm)
Registered type
Serial PD
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