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參數(shù)資料
| 型號： | MC-4516DC72 |
| 廠商： | NEC Corp. |
| 英文描述： | 16 M-Word By 72-Bit Synchronous Dynamic RAM Module(同步動態(tài)RAM 模塊) |
| 中文描述： | 16米，由72個字位同步動態(tài)隨機存儲器模塊（同步動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 11/24頁 |
| 文件大?。?/td> | 211K |
| 代理商： | MC-4516DC72 |
11
MC-4516DC72
Asynchronous Characteristics
[ MC-4516DC72-A10, 4516DC72-A12 ]
Parameter
Symbol
-A10
-A12
Unit
Note
MIN.
MAX.
MIN.
MAX.
REF to REF/ACT command period
t
RC
100
120
ns
ACT to PRE command period
t
RAS
60
120,000
72
120,000
ns
PRE to ACT command period
t
RP
30
36
ns
Delay time ACT to READ/WRITE
command
ACT(one) to ACT(another)
command period
t
RCD
30
36
ns
t
RRD
20
24
ns
Data-in to PRE command period
t
DPL
–1CLK
+
10
–1CLK
+
12
ns
Data-in to ACT(REF) command
/CAS latency = 3
t
DAL3
1CLK + 30
1CLK + 30
ns
period (Auto precharge)
/CAS latency = 2
t
DAL2
30
30
ns
Mode register set cycle time
t
RSC
20
20
ns
Transition time
t
T
1
30
1
30
ns
Refresh time
t
REF
64
64
ms
[ MC-4516DC72-A10B ]
Parameter
Symbol
-A10B
Unit
Note
MIN.
MAX.
REF to REF/ACT command period
t
RC
90
ns
ACT to PRE command period
t
RAS
60
120,000
ns
PRE to ACT command period
t
RP
30
ns
Delay time ACT to READ/WRITE
command
ACT(one) to ACT(another)
command period
t
RCD
30
ns
t
RRD
20
ns
Data-in to PRE command period
t
DPL
10
ns
Data-in to ACT(REF) command
/CAS latency = 3
t
DAL3
1CLK + 30
ns
period (Auto precharge)
/CAS latency = 2
t
DAL2
1CLK + 30
ns
Mode register set cycle time
t
RSC
2
CLK
Transition time
t
T
1
30
ns
Refresh time
t
REF
64
ms
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