參數(shù)資料
型號(hào)： MC33883
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： H-Bridge Gate Driver IC(H橋柵極驅(qū)動(dòng)器)
中文描述： H橋門驅(qū)動(dòng)器集成電路（高橋柵極驅(qū)動(dòng)器）
文件頁數(shù)： 11/20頁
文件大小： 556K
代理商： MC33883
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
33883
11
APPLICATION REQUIREMENTS
Turn-On
For turn-on, the current required to charge the gate source
capacitor C
iss
in the specified time can be calculated as follows:
I
P
=Q
g
/t
r
=80nC/80ns
≈
1.0A
Where Q
g
is power MOSFET gate charge and t
r
is peak current
for rise time.
Turn-Off
The peak current for turn-off can be obtained in the same
way as for turn-on, with the exception that peak current for fall
time, t
f
, is substituted for t
r
:
I
P
=Q
g
/t
f
=80nC/80ns
≈
1.0A
In addition to the dynamic current required to turn off or on
the MOSFET, various application-related switching scenarios
must be considered. These scenarios are presented in
Figure 5
. In order to withstand high dV/dt spikes, a low resistive
path between gate and source is implemented during the OFF-
state.
Figure 5. OFF-State Driver Requirement
Driver Requirement:
Low Resistive Gate-
Source Path During
OFF-State
Flyback spike charges low-
side gate via C
rss
charge
current I
rss
up to 2.0 A.
Causes increased uncon-
trolled turn-on of low-side
MOSFET.
C
iss
C
iss
C
rss
C
rss
V
BAT
Driver Requirement:
Low Resistive Gate-
Source Path During
OFF-State. High Peak
Sink Current Capability
Flyback spike pulls down
high-side source V
GS
.
Delays turn-off of high-
side MOSFET.
C
iss
C
iss
C
rss
C
rss
V
BAT
Driver Requirement:
High Peak Sink Current
Capability
Flyback spike charges low-
side gate via C
rss
charge
current I
rss
up to 2.0 A.
Delays turn-off of low-side
MOSFET.
C
iss
C
iss
C
rss
C
rss
V
BAT
Driver Requirement:
Low Resistive Gate-
Source Path During
OFF-State
C
iss
C
iss
C
rss
C
rss
V
BAT
Flyback spike pulls down
high-side source V
GS
.
Causes increased uncon-
trolled turn-on of high-side
MOSFET.
OFF
OFF
OFF
OFF
GATE_LS
I
LOAD
L1
I
LOAD
L1
I
LOAD
L1
I
LOAD
L1
I
rss
V
GATE
V
GATE
-V
DRN
GATE_HS
GATE_LS
GATE_HS
GATE_HS
GATE_LS
GATE_HS
GATE_LS
F
Freescale Semiconductor, Inc.
Go to: www.freescale.com
n
.
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MC33883DW 功能描述:IC H-BRIDGE PRE-DRIVER 20-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MC33883DWR2 功能描述:IC H-BRIDGE PRE-DRIVER 20-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件
MC33883HEG 功能描述:功率驅(qū)動(dòng)器IC FULL BRIDGE GATE DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MC33883HEGR2 功能描述:功率驅(qū)動(dòng)器IC FULL BRIDGE GATE DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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